电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RVP40

产品描述0.7 A, 40000 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小53KB,共2页
制造商ETC
下载文档 全文预览

RVP40概述

0.7 A, 40000 V, SILICON, SIGNAL DIODE

文档预览

下载PDF文档
KVP
RVP
KILOVOLT RECTIFIER ASSEMBLIES
MATCHED SILICON RECTIFIER ELEMENTS
RATED CURRENT TO 1.0 AMPERES
PRV 5,000 TO 50,000 VOLTS
FAST RECOVERY (RVP SERIES)
ALL APPLICABLE MIL-STD-750 TESTS
HIGH THERMAL CONDUCTIVITY ENCAPSULATION
Dim ensi on
L
Inches
Fig .3
2.5
2.5
3.0
3.0
3.0
3.5
5.0
5.5
6.0
6.0
6.5
6.5
7.0
2.5
2.5
3.0
3.0
3.0
3.5
5.0
5.5
6.0
6.0
6.5
6.5
7.0
Dim ensi on
C
Inch es
Fig .3
EDI Type No.
Peak
Reverse Voltage
PRV ( Volt s)
5,000
6,000
7,000
8,00 0
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
Avg . Fwd .Cu rre nt
o
I
O
at 25 C
(Am ps)
Max. Fwd Voltage
Drop at 25
o
C
and 1A.
V
F
(Volts)
KVP5
KVP6
KVP7
KVP8
KVP9
KV P10
KV P15
KV P20
KV P25
KVP30
KV P35
KV P40
KV P50
RVP5
RVP6
RV P7
RV P8
RV P9
RV P10
RV P15
RV P20
RV P25
RVP30
RVP35
RVP40
RVP50
STANDARD RECOVERY
1.00
8
1.00
9
1.00
10
1.00
11
1.00
14
1.00
15
1.00
21
.75
26
.75
32
.75
39
.75
46
.75
53
.75
65
200 NANOSECOND RECOVERY (FIG.4)
.90
10
.90
11
.90
12
.90
13
.90
16
.90
17
.90
25
.70
30
.70
36
.70
43
.70
50
.70
58
.70
72
1
/
4
3
/
8
1
/
1
4
/
2
1
/
4
/
8
3
1
/
4
1
/
2
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
o
Max. DC Reverse Current @ PRV and 25 C, I
R
KVP SERIES
STANDARD
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
o
RVP SERIES
FAST
RECOVERY
5
100
A
A
5
A
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
Max. DC Reverse Current @ PRV and 100 C, I
R
o
250
A
-55
o
C to +150
o
C
-55
o
C to +150
o
C
50 Amps
10 Amps
Max. Reverse Recovery Time , T
rr
(Fig.4)
300 nanosec
-55
o
C to +150
o
C
-55
o
C to +150
o
C
30 Amps
8 Amps
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
Ambient Operating Temperature Range,T
A
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
EDI reserves the right to change these specifications at any time without notice.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2363  2923  827  2000  2635  8  19  2  30  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved