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EN25F10A-104WIP

产品描述Flash, 128KX8, PDSO8, 5 X 6 MM, HALOGEN FREE, ROHS AND REACH COMPLIANT, VDFN-8
产品类别存储    存储   
文件大小1MB,共62页
制造商Eon
官网地址http://www.essi.com.tw/
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EN25F10A-104WIP概述

Flash, 128KX8, PDSO8, 5 X 6 MM, HALOGEN FREE, ROHS AND REACH COMPLIANT, VDFN-8

EN25F10A-104WIP规格参数

参数名称属性值
Objectid8073542464
包装说明5 X 6 MM, HALOGEN FREE, ROHS AND REACH COMPLIANT, VDFN-8
Reach Compliance Codeunknown
ECCN代码EAR99
最大时钟频率 (fCLK)104 MHz
JESD-30 代码R-PDSO-N8
长度6 mm
内存密度1048576 bit
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量8
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行SERIAL
编程电压2.7 V
座面最大高度0.8 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式NO LEAD
端子节距1.27 mm
端子位置DUAL
类型NOR TYPE
宽度5 mm

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EN25F10A
EN25F10A
1 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
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Single power supply operation
Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
SPI Compatible: Mode 0 and Mode 3
1 M-bit Serial Flash
1 M-bit/128 K-byte/512 pages
256 bytes per programmable page
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#, HOLD#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for Standard SPI
104MHz clock rate for two data bits
104MHz clock rate for four data bits
Low power consumption
10mA typical active current
1
μA
typical power down current
Uniform Sector Architecture:
32 sectors of 4-Kbyte
4 blocks of 32-Kbyte
2 blocks of 64-Kbyte
Any sector or block can be erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 0.7ms typical
- Sector erase time: 30ms typical
- 32KB Block erase time 100ms typical
- 64KB Block erase time 200ms typical
- Chip erase time: 0.4 seconds typical
Lockable 512 byte OTP security sector
Support Serial Flash Discoverable
Parameters (SFDP) signature
Read Unique ID Number
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 150mil body width
- 8 pins VSOP 150mil body width
- 8 contact USON 2x3 mm
- 8 contact VDFN 5x6 mm
- All Pb-free packages are compliant RoHS,
Halogen-Free and REACH.
Industrial temperature Range
GENERAL DESCRIPTION
The EN25F10A is a 1 Megabit (128 K-byte) Serial Flash memory, with enhanced write protection
mechanisms. The EN25F10A supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select,
Serial DQ
0
(DI), DQ
1
(DO), DQ
2
(WP#) and DQ
3
(HOLD#). SPI clock frequencies of up to 104MHz are
supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 416MHz
(104MHz x 4) for Quad Output when using the Dual/Quad I/O Fast Read instructions. The memory can
be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25F10A is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25F10A can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
©2013 Eon Silicon Solution, Inc.,
1
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2013/11/12
www.eonssi.com

 
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