电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RZ1030

产品描述Avalanche Diodes with built-in Thyristor
产品类别模拟混合信号IC    触发装置   
文件大小18KB,共2页
制造商SANKEN
官网地址http://www.sanken-ele.co.jp/en/
下载文档 详细参数 选型对比 全文预览

RZ1030概述

Avalanche Diodes with built-in Thyristor

RZ1030规格参数

参数名称属性值
厂商名称SANKEN
包装说明LONG FORM, O-PALF-W2
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE WITH BUILT-IN DIODE
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置AXIAL
触发设备类型SCR

文档预览

下载PDF文档
Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings
Parameter
Type No.
V
RDC
(V)
(–10ºC)
I
TSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
Z
(V)
I
R
(µA)
V
R
= V
RM
max
I
R
(H)
(µA)
V
R
= V
RM
Ta =100°C max
Others
Tj
(°C)
(typ.)
Mass
Fig.
(g)
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
RZ1175
RZ1200
EZ0150
20
28
40
27 to 33
34 to 40
50 to 60
60 to 70
30
–10 to +125
–40 to +150
90 to 110
115 to 135
140 to 160
165 to 185
185 to 215
140 to 160
0.03
0.05
0.07
0.44
10
50
0.18
0.22
0.30
0.18
0.2
B
A
*
*
*
50
80
105
125
150
180
125
*
Under development
RZ1030
22
DC reverse blocking voltage V
R (DC)
(V)
RZ1040
50
Reverse breakdown voltage
V
Z
(V)
V
R(DC)
Temperature characteristic
V
Z
Temperature dependence
DC reverse blocking voltage V
R(DC)
(V)
30
V
R(DC)
Temperature characteristic
Reverse breakdown voltage
V
Z
(V)
55
50
45
40
38
35
30
28
25
V
Z
Temperature dependence
21
45
40
35
31.9
30
25.9
25
22
20
–10 0
max
min
36
29
max
20
28
min
19
30
27
V
RDC
Temperature characteristic
18
V
RDC
Temperature characteristic
26
–10 0
25
50
75
100
125
25
50
75
100
125
–10 0
25
50
75
100
125
–10 0
25
50
75
100
125
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
RZ1055
45
DC reverse blocking voltage V
R (DC)
(V)
RZ1065
70
Reverse breakdown voltage
V
Z
(V)
V
R(DC)
Temperature characteristic
V
Z
Temperature dependence
67
max
65
60
57.6
55
50
47.6
45
40
–10 0
25
50
40
57
min
V
RDC
Temperature characteristic
35
–10 0
25
50
75
100
125
75
100
125
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
RZ1100
RZ1125
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.78
±0.05
Fig.
B
0.6
±0.05
Equivalent circuit diagram
Cathode Mark
Cathode Mark
62.5
±0.7
62.3
±0.7
7.2
±0.2
5.0
±0.2
4.0
±0.2
2.7
±0.2
110

RZ1030相似产品对比

RZ1030 RZ1200 RZ1175 RZ1150 RZ1125 RZ1100 RZ1065 RZ1055 EZ0150
描述 Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor
包装说明 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2 LONG FORM, O-PALF-W2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
元件数量 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
触发设备类型 SCR SCR SCR SCR SCR SCR SCR SCR SCR
厂商名称 SANKEN SANKEN SANKEN SANKEN SANKEN - - - SANKEN
漂亮的激光
这个蛮好看的。 37378 37379...
laojiededepan 创意市集
dsp2406烧写问题
请问高手,TI的DSP2406的烧写方式是不是ISP方式啊? 还是IAP?我感觉是ISP,可是又不能确定。请指教,谢谢!...
yutingchenghong 微控制器 MCU
请教MQ-4,MQ-7,MQ-137等MQ系列气体传感器应用。
MQ系列传感器如何将电压信号转换成气体浓度值。Rs/Ro与气体浓度的关系是什么,怎么推导,公式是什么。请高手指教。...
liushikai 传感器
为什么这博客老会被删呢
原来觉得这博客很好,收录不错,但原来不是的,每发一编文章被收录后,都会被删,浪费了心血,写一编删一编,我只是写普通的东西而已阿,又没发什么,都搞不懂,有人可以解释一下吗?真没耐心再 ......
东莞正田科技 聊聊、笑笑、闹闹
WINCE下是否有可以查看CPU频率和内存频率的工具?
想看下板子实际跑起来的内存频率和CPU频率, 谢谢!...
songfgd 嵌入式系统
cann`t set breakpoint
本帖最后由 dontium 于 2015-1-23 13:32 编辑 load program时出现标题所示错误提示,怎么解决? 清高手指点! 多谢! ...
dfx168 模拟与混合信号

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2187  280  2450  1788  257  45  6  50  36  29 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved