Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Interdigitated structure provides high emitter efficiency
•
Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
•
Gold metallization realizes very stable characteristics
and excellent lifetime
•
Multicell geometry gives good balance of dissipated
power and low thermal resistance
•
Internal input matching ensures good stability and
allows an easier design of wideband circuits.
APPLICATIONS
•
Common base class-C wideband pulsed power
amplifiers for L-band radar applications in the
1.2 to 1.4 GHz band.
2
3
handbook, halfpage
RZ1214B35Y
PINNING - SOT443A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
1
c
b
e
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
Top view
MAM314
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class-C wideband amplifier.
MODE OF OPERATION
Class-C; t
p
= 150
µs; δ
= 5%
f
(GHz)
1.2 to 1.4
V
CC
(V)
50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
P
L
(W)
≥35
G
p
(dB)
≥7
η
C
(%)
≥30
Z
i
; Z
L
(Ω)
see Fig 4
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
at 0.2 mm from the case;
t
≤
10 s
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
t
p
≤
150
µs; δ ≤
5%≤
T
mb
≤
75
°C;
t
p
≤
150
µs; δ ≤
5%
−
−
−
−
−
−
−65
−
−
MIN.
RZ1214B35Y
MAX.
65
15
60
3
3
125
+200
200
235
V
V
V
V
A
W
UNIT
°C
°C
°C
handbook, halfpage
150
MGD974
Ptot
(W)
100
50
0
0
50
100
150
200
Tmb (°C)
t
p
=
150
µs; δ =
5%.
Fig.2
Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
T
j
= 75
°C
unless otherwise specified
SYMBOL
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See
“Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
CONDITIONS
I
C
= 20 mA; I
E
= 0
I
C
= 20 mA; R
BE
= 0
I
C
= 0; I
E
= 3 mA
V
CB
= 50 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
65
60
3
−
−
MIN.
PARAMETER
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
thermal resistance from junction to heatsink
note 1
t
p
= 100
µs; δ
= 10 %;
notes 1 and 2
CONDITIONS
RZ1214B35Y
MAX.
5
0.2
1
UNIT
K/W
K/W
K/W
MAX.
−
−
−
2
0.2
V
V
V
UNIT
mA
mA
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions
MODE OF
OPERATION
Class-C
CONDITIONS
t
p
= 150
µs; δ
= 5%
f
(GHz)
1.2 to 1,4
V
CC
(V)
50
50
P
L
(W)
typ.40; >35
typ.40;
G
p
(dB)
typ.7.8; >7
typ.7
η
C
(%)
typ.35; >35
typ.35
Z
i
; Z
L
(Ω)
see Fig 4
see Fig 4
t
p
= 300
µs; δ
= 10% 1.2 to 1,4
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
handbook, full pagewidth
VCC
input
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,
,,,,,,,,,,,,,
,,
,,,,,,,,,,,,,
11.5
7
5
5
5.75
0.59
0.59
19.5
100 pF
3
8
5
10
5.15
5
8
3
output
MGK061
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
Fig.3 Wideband test circuit for class C operation at 1.2 to 1.4 GHz.
1
handbook, full pagewidth
0.5
2
0.2
Zi
1.4 GHz
+j
0
–j
0.2
0.5
1.2
1.3
1.4 GHz
0.2
1
1.3 1.2
2
5
10
5
10
∞
10
5
ZL
0.5
1
Class C operation; V
CE
= 50 V; P
L
= 35 W; Z
o
= 5
Ω;
t
p
=
150
µs; δ =
5%.
2
MCD626
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
1997 Feb 18
5
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