IXYS
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
2200
2400
2600
Date: 13.08.2011
Data Sheet Issue: 1
Dual Diode Modules
MD#710-22N2-26N2
MDD
710-22N2
710-24N2
710-26N2
MDA
710-22N2
710-24N2
710-26N2
MDK
710-22N2
710-24N2
710-26N2
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage
1)
Non-repetitive peak off-state voltage
1)
Repetitive peak reverse voltage
1)
Non-repetitive peak reverse voltage
1)
MAXIMUM
LIMITS
2200-2600
2300-2700
2200-2600
2300-2700
UNITS
V
V
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(RMS)M
I
F(d.c.)
I
FSM
I
FSM2
I
2
t
I
2
t
V
ISOL
T
vj op
T
stg
Maximum average on-state current, T
C
= 85°C
2)
Maximum average on-state current. T
C
= 100°C
2)
Nominal RMS on-state current, T
C
= 55°C
2)
D.C. on-state current, T
C
= 55°C
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
3)
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10V
3)
2
3)
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
MAXIMUM
LIMITS
708
587
1440
1198
12.7
14
806 x 10
3
980 x 10
3
3000
-40 to +150
-40 to +150
UNITS
A
A
A
A
kA
kA
A
2
s
A
2
s
V
°C
°C
I
2
t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
3)
Isolation Voltage
4)
Operating temperature range
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 150°C T
vj
initial.
4) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types MD#710-22N2 and MD#710-26N2 Issue 1
Page 1 of 9
August, 2011
IXYS
Characteristics
PARAMETER
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
rm
t
rr
R
thJC
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Thermal resistance, junction to case
Diode Module Types MD#710-22N2 to MD#710-26N2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
1900
1700
150
23
-
-
-
-
-
-
1.5
MAX. TEST CONDITIONS
1)
1.36
0.80
0.35
50
2125
-
-
-
0.062 Single Diode
0.031 Whole Module
0.02
0.01
6.9
13.2
-
Single Diode
Whole Module
I
TM
= 1000 A, t
p
=1ms, di/dt =10A/µs,
V
R
=100 V
Rated V
RRM
I
FM
= 1570A
UNITS
V
V
mΩ
mA
µC
µC
A
µs
K/W
K/W
K/W
K/W
Nm
Nm
kg
R
thCH
F
1
F
2
W
t
Thermal resistance, case to heatsink
Mounting force (to heatsink)
2)
Mounting force (to terminals)
2)
Weight
Notes:
1) Unless otherwise indicated T
vj
=150°C.
2) Screws must be lubricated.
5.1
10.8
-
Rating Report. Types MD#710-22N2 and MD#710-26N2 Issue 1
Page 2 of 9
August, 2011
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
22
24
26
V
RRM
V
2200
2400
2600
Diode Module Types MD#710-22N2 to MD#710-26N2
V
RSM
V
2300
2500
2700
V
R
DC V
1650
1800
1950
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
= 0.8 V, r
T
= 0.35 mΩ.
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0702
0.0677
60°
0.0685
0.0673
90°
0.0679
0.0664
120°
0.0668
0.0655
180°
0.0658
0.0650
270°
0.0637
d.c.
0.0620
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Rating Report. Types MD#710-22N2 and MD#710-26N2 Issue 1
Page 3 of 9
August, 2011
IXYS
Diode Module Types MD#710-22N2 to MD#710-26N2
5.2 Calculating V
F
using ABCD Coefficients
The on-state characteristic I
F
vs. V
F
, on page 6 is represented in two ways:
(i)
The well established V
T0
and r
T
tangent used for rating purposes
(ii)
A set of constants A, B, C, D, forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln
(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
F
agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A
B
C
D
0.9793297
0.02691659
1.928214e
-4
7.102171e
-4
A
B
C
D
150°C Coefficients
0.5657172
0.03677309
3.198422e
-4
3.316503e
-4
Rating Report. Types MD#710-22N2 and MD#710-26N2 Issue 1
Page 4 of 9
August, 2011
IXYS
5.3 D.C. Thermal Impedance Calculation
Diode Module Types MD#710-22N2 to MD#710-26N2
−
t
⎛
τ
r
t
=
∑
r
p
⋅ ⎜
1
−
e
p
⎜
p
=
1
⎝
p
=
n
⎞
⎟
⎟
⎠
Where
p = 1
to
n and:
n
t
r
t
r
p
τ
p
= number of terms in the series
= Duration of heating pulse in seconds
= Thermal resistance at time t
= Amplitude of p
th
term
= Time Constant of r
th
term
The coefficients for this device are shown in the table below:
D.C.
Term
1
1.37×10
-3
7.6×10
-4
2
4.86×10
-3
8.6×10
-3
3
0.0114
0.101
4
0.0223
0.56
5
0.0221
3.12
r
p
τ
p
6.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150 µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Rating Report. Types MD#710-22N2 and MD#710-26N2 Issue 1
Page 5 of 9
August, 2011
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