Advance Technical Information
High Voltage
XPT
TM
IGBT
IXYT25N250CHV
IXYH25N250CHV
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
2500V
25A
4.0V
246ns
TO-268HV (IXYT)
G
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
TO-268HV
TO-247HV
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 150°C, R
G
= 5
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
2500
2500
±20
±30
95
25
235
I
CM
= 100
1500
937
-55 ... +175
175
-55 ... +175
300
260
1.13/10
4
6
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
G
E
C
G = Gate
E = Source
C (Tab)
C
= Drain
Tab = Drain
TO-247HV (IXYH)
C
(Tab)
Features
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 100°C
V
CE
= 0V, V
GE
= ±20V
I
C
= 25A, V
GE
= 15V, Note 1
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
2500
3.0
100
±100
3.4
4.7
4.0
5.0
25
V
V
μA
μA
nA
V
V
Low Gate Drive Requirement
High Power Density
Applications
V
CE
= V
CES
, V
GE
= 0V
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100762A(12/16)
IXYT25N250CHV
IXYH25N250CHV
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
R
Gi
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 25A, V
CE
= 10V, Note 1
Gate Input Resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
16
27
2.8
3060
114
43
147
16
68
15
34
8.3
230
246
7.3
18
33
11.0
225
350
10.5
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.16 °C/W
°C/W
1
e
3
D
2
L4
e
TO-268HV Outline
E
L2
A
C2
E1
H
3
D2
2
1
D1
A1
C
D3
b
I
C
= 25A, V
GE
= 15V, V
CE
= 0.5 • V
CES
PINS:
1 - Gate 2 - Emitter
3 - Collector
L3
A2
L
Inductive load, T
J
= 25°C
I
C
= 25A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5
Note 2
Inductive load, T
J
= 150°C
I
C
= 25A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5
Note 2
TO-247HV Outline
R
E
0P
Q S
D1
4
D2
1 2
D3
3
L1
A3
2X
A1
E2
E3
4X
A2
A
0P1
E1
D
Note:
1. Pulse test, t
300s, duty cycle, d
2%.
e
e1
L
c
b
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
3X
3X
b1
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYT25N250CHV
IXYH25N250CHV
Fig. 1. Output Characteristics @ T
J
= 25ºC
50
V
GE
= 25V
19V
15V
13V
11V
250
V
GE
= 25V
19V
15V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
40
200
9V
13V
I
C
- Amperes
I
C
-
Amperes
30
150
11V
20
7V
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
100
9V
50
7V
0
0
5
10
5V
15
20
25
30
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
50
V
GE
= 25V
19V
15V
13V
11V
2.2
2.0
9V
1.8
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
40
V
CE(sat)
- Normalized
1.6
1.4
I
C
= 50A
I
C
- Amperes
30
7V
20
I
C
= 25A
1.2
1.0
0.8
0.6
I
C
= 12.5A
10
5V
0
0
1
2
3
4
5
6
7
8
0.4
-50
-25
0
25
50
75
100
125
150
175
V
CE
- Volts
T
J
- Degrees Centigrade
7
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
T
J
= 25ºC
Fig. 6. Input Admittance
90
80
70
60
6
V
CE
- Volts
5
I
C
= 50A
I
C
-
Amperes
50
40
30
20
T
J
= 150ºC
25ºC
- 40ºC
4
25A
3
12.5A
2
5
7
9
11
13
15
17
19
21
23
25
10
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
V
GE
- Volts
V
GE
- Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXYT25N250CHV
IXYH25N250CHV
Fig. 7. Transconductance
44
40
36
32
25ºC
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
140
T
J
= - 40ºC
14
16
V
CE
= 1250V
I
C
= 25A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
28
24
20
16
12
8
4
0
150ºC
I
C
- Amperes
V
GE
- Volts
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
120
Fig. 10. Reverse-Bias Safe Operating Area
100
Capacitance - PicoFarads
Cies
1,000
80
I
C
- Amperes
60
Coes
100
40
T
J
= 150ºC
R
G
= 5
Ω
dv / dt < 10V / ns
20
f
= 1 MHz
10
0
5
10
15
20
25
30
Cres
0
35
40
100
400
700
1000
1300
1600
1900
2200
2500
V
CE
- Volts
V
CE
- Volts
Fig. 11. Forward-Bias Safe Operating Area
1000
1
Fig. 12. Maximum Transient Thermal Impedance
100
V
CE(sat)
Limit
0.1
I
D
- Amperes
10
100µs
1ms
1
Z
(th)JC
- K / W
10000
25µs
0.01
10ms
0.1
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
0.01
1
10
100
1000
DC
100ms
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT25N250CHV
IXYH25N250CHV
26
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
E
off
E
on
32
24
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
E
off
E
on
24
22
T
J
= 150ºC , V
GE
= 15V
V
CE
= 1250V
28
20
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
20
E
off
- MilliJoules
E
off
- MilliJoules
18
I
C
= 50A
14
24
16
16
E
on
- MilliJoules
E
on
- MilliJoules
20
12
T
J
= 25ºC
8
12
10
I
C
= 25A
6
16
8
12
4
4
2
5
10
15
20
25
30
35
40
45
50
55
8
0
10
15
20
25
30
35
40
45
50
0
R
G
- Ohms
I
C
- Amperes
26
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
E
off
E
on
28
500
450
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
t
fi
V
CE
= 1250V
1200
1050
900
t
d(off)
22
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
24
400
T
J
= 150ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
E
off
- MilliJoules
18
20
E
on
- MilliJoules
350
300
250
200
I
C
= 25A
I
C
= 50A
750
600
450
300
150
0
5
10
15
20
25
30
35
40
45
50
55
14
16
10
I
C
= 25A
12
6
8
150
100
2
25
50
75
100
125
4
150
T
J
- Degrees Centigrade
R
G
- Ohms
600
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
t
d(off)
600
460
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
t
d(off)
350
500
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
500
380
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
300
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
400
T
J
= 150ºC
300
400
300
I
C
= 25A
250
300
220
200
T
J
= 25ºC
200
I
C
= 50A
200
100
100
140
150
0
10
15
20
25
30
35
40
45
50
0
60
25
50
75
100
125
100
150
I
C
- Amperes
T
J
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
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