AP9938AGEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Low On-resistance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
2928-8
D1/D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
G2
S2
G1
S1
20V
16mΩ
7.5A
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G1
D1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+12
7.5
6
40
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201212121
Data and specifications subject to change without notice
AP9938AGEY-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=6A
V
DS
=16V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=6A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=10V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=1.1A, V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
20
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
13.2
17
0.6
23.6
-
-
12
1.2
3.5
7
10
21
7.5
850
130
120
1.4
Typ.
-
17
5
Max. Units
-
16
24
1
-
10
+30
19.2
-
-
-
-
-
-
1360
-
-
2.8
V
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 210
o
C/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9938AGEY-HF
50
40
T
A
=25
o
C
40
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
= 150 C
o
30
5.0V
4.5V
3.5V
2.5V
30
V
G
=1.8V
20
V
G
=1.8V
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
22
1.8
I
D
=2A
T
A
=25 C
20
o
I
D
=6A
V
G
=4.5V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
18
16
1.0
14
12
1
2
3
4
5
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I
D
=250uA
1.6
6
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
Normalized V
GS(th)
1.2
1.4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9938AGEY-HF
6
1200
f=1.0MHz
5
I
D
=6A
V
DS
=10V
1000
V
GS
, Gate to Source Voltage (V)
C (pF)
4
800
C
iss
3
600
2
400
1
200
0
0
4
8
12
16
0
1
5
9
13
17
C
oss
C
rss
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
10
100us
1ms
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
I
D
(A)
0.1
1
10ms
100ms
0.1
0.05
P
DM
t
T
0.02
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=210
o
C/W
Single Pulse
0.01
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
8
V
DS
=5V
30
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
T
j
= -40
o
C
0
1
2
3
4
6
I
D
, Drain Current (A)
20
4
10
2
0
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature (
o
C )
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
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