AP9620GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On Resistance
▼
Capable of 2.5V Drive
▼
Fast Switching
▼
RoHS Compliant
SO-8
S
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
S
S
-20V
20mΩ
-9.5A
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±8
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
200805061
AP9620GM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-9.5A
V
GS
=-2.5V, I
D
=-6.0A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=70
o
C)
Min. Typ. Max. Units
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
28
-
-
-
30
6
3.5
26
500
70
300
2158
845
230
-
20
35
-1
-
-1
-25
±100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9.5A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=
±
8V
I
D
=-9.5A
V
DS
=-10V
V
GS
=-5V
V
DS
=-10V
I
D
=-9.5A
R
G
=6Ω,V
GS
=-4.5V
R
D
=1.05Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=-1.2V
T
j
=25℃, I
S
=-2.5A, V
GS
=0V
Min. Typ. Max. Units
-
-
-
-
-2.08
-1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9620GM-HF
120
100
T
A
=25
o
C
90
-10V
-8.0V
80
T
A
=150
o
C
-10V
-8.0V
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-6.0V
60
60
-6.0V
V
GS
=-4.0V
40
V
GS
=-4.0V
30
20
0
0
2
4
6
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.6
35
I
D
=-9.5A
T
A
=25
℃
I
D
=-9.5A
V
GS
=4.5V
1.4
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
30
1.2
25
1.0
20
0.8
15
1
2
3
4
5
6
0.6
-50
0
50
100
150
-V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP9620GM-HF
10
3
2.5
8
-I
D
, Drain Current (A)
2
6
P
D
(W)
4
2
0
25
50
75
100
125
150
1.5
1
0.5
0
0
30
60
90
120
150
T
c
, Case Temperature (
o
C)
T
c
, Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
Duty Factor = 0.5
100
Normalized Thermal Response (R
thja
)
0.2
100us
10
0.1
0.1
1ms
-I
D
(A)
10ms
1
0.05
0.02
0.01
P
DM
Single Pulse
100ms
1s
10s
DC
0.01
t
T
0.1
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP9620GM-HF
f=1.0MHz
7
10000
6
I
D
=-9.5A
V
DS
=-10V
-V
GS
, Gate to Source Voltage (V)
5
C (pF)
4
Ciss
1000
3
Coss
2
1
Crss
0
0
5
10
15
20
25
30
35
40
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
1
0.8
10.00
-I
S
(A)
1.00
T
j
=25
o
C
-V
GS(th)
(V)
1.1
1.3
1.5
T
j
=150
o
C
0.6
0.4
0.10
0.2
0.01
0.1
0.3
0.5
0.7
0.9
0
-50
0
50
100
150
-V
SD
(V)
T
j
, Junction Temperature (
o
C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
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