UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
TO-126
1
TO-251
*Pb-free plating product number: 2SD669/AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD669-x-T60-A-K
2SD669L-x-T60-A-K
2SD669A-x-T60-A-K
2SD669AL-x-T60-A-K
2SD669-x-TM3-A-T
2SD669L-x-TM3-A-T
2SD669A-x-TM3-A-T
2SD669AL-x-TM3-A-T
Note: x: Rank, refer to Classification of h
FE1
2SD669L-x-T60-A-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) K: Bulk, T: Tube
(2) refer to Pin Assignment
(3) T60: TO-126, TM3: TO-251
(4) x: refer to Classification of h
FE1
(5) L: Lead Free Plating, Blank: Pb/Sn
Package
TO-126
TO-126
TO-251
TO-251
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Bulk
Bulk
Tube
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-005,D
2SD669/A
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation (T
C
=25℃)
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(
Ta=
25℃,
unless otherwise specified)
SYMBOL
V
CBO
2SD669
2SD669A
V
CEO
V
EBO
I
C
l
C(PEAK)
P
D
P
D
RATINGS
180
120
160
5
1.5
3
1
20
UNIT
V
V
V
A
A
W
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to bse breakdown voltage
V
(BR)CBO
I
C
=1mA, I
E
=0
Collector to emitter breakdown 2SD669
V
(BR)CEO
I
C
=10mA, R
BE
=∞
voltage
2SD669A
Emitter to base breakdown voltage
V
(BR)EBO
I
E
=1mA, I
C
=0
Collector cut-off current
I
CBO
V
CB
=160V, I
E
=0
h
FE1
V
CE
=5V, I
C
=150mA (note)
DC current gain
V
CE
=5V, I
C
=500mA (note)
h
FE2
Collector-emitter saturation voltage
V
CE(SAT)
I
C
=600mA, I
B
=50mA (note)
Base-emitter voltage
V
BE
V
CE
=5V, I
C
=150mA (note)
Current gain bandwidth product
f
T
V
CE
=5V, I
C
=150mA (note)
Output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
Note: Pulse test.
MIN
180
120
160
5
60
30
TYP
MAX
UNIT
V
V
V
µA
10
320
1
1.5
140
14
V
V
MHz
pF
CLASSIFICATION OF h
FE1
RANK
RANGE
B
60-120
C
100-200
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
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2 of 4
QW-R204-005,D
2SD669/A
TYPICAL CHARACTERISTICS
Maximum Collector Dissipation
Curve
NPN EPITAXIAL SILICON TRANSISTOR
Area of Safe Operation
3
Collector Current, I
C
(A)
Collector Power Dissipation, P
D
(W)
30
(13.3V, 1.5A)
1.0
0.3
0.1
0.03
0.01
1
40V, 0.5A
2SD669A
DC Operation (T
C
=25℃)
(120V, 0.04A)
(160V, 0.02A)
2SD669
3
10
30
100
300
20
10
0
50
100
150
Case temperature, T
C
(℃)
Typical Output Characteristecs
Collector to Emitter Voltage, V
CE
(V)
Typical Transfer Characteristics
500
V
CE
=5V
5.
5
.0
1.0
4.
55
0.8
0.6
0.4
0.2
Collector Current, I
C
(mA)
Collector Current, I
C
(A)
T a=
1.0
0.5mA
I
B
=0
10
5
2
0
10
20
30
40
50
1
0
Collector to Emitter Voltage, V
CE
(V)
DC Current Transfer Ratio
vs. Collector Current
300
5
℃
Ta=7
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.2
I
C
=10 I
B
DC Current Transfer Ratio, h
FE
250
200
150
100
50
1
1
3
10
30
100 300 1,000 3,000
Collector Current, I
C
(mA)
V
CE
=5V
25
-20
Collector to emitter saturation
voltage, V
CE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
300
1,000
Collector Current, I
C
(mA)
T
5
=7
C
25
-2 0
℃
1.5
20
75
℃
4 .0
3 .5
3 .0
2.5
2.0
T
C
=25℃
200
100
50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
-2 0
0W
=2
P
D
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QW-R204-005,D
2SD669/A
TYPICAL CHARACTERISTICS(Cont.)
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
=10I
B
20
T
C
=-
25
75
℃
NPN EPITAXIAL SILICON TRANSISTOR
1.2
Base to Emitter Saturation
Voltage, V
BE(SAT)
(V)
240
Gain Bandwidth Product, f
T
(MHz)
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25℃
1.0
0.8
0.6
0.4
0.2
0
200
160
120
80
40
0
10
1
3
10
30
100 300 1,000
Collector Current, I
C
(mA)
Collector Output Capacitance
vs. Collector to Base Voltage
30
100
300
1,000
Collector Current, I
C
(mA)
Collector Output Capacitance, C
ob
(pF)
200
100
50
20
10
5
2
1
2
5
10
20
50
100
Collector to Base Voltage, V
CB
(V)
f=1MHz
I
E
=0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-005,D
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