AP9581GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant Product
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-80V
15mΩ
-95A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-80
+20
-95
-60
-300
250
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
o
o
C
C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
62
Units
o
o
C/W
C/W
1
Data and specifications subject to change without notice
201107181
AP9581GP-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-30A
V
GS
=-4.5V, I
D
=-20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-30A
V
DS
=-64V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-30A
V
DS
=-64V
V
GS
=-4.5V
V
DS
=-40V
I
D
=-30A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-80
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
60
-
-
72
11
45
13
60
135
165
900
390
Max. Units
-
15
20
-3
-
-25
+100
115
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
(P)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
6200 9920
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-30A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
60
125
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9581GP-HF
250
160
T
C
= 25 C
200
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-8.0V
-7.0V
-6.0V
V
G
= - 5.0V
T
C
=150
o
C
120
-10V
-8.0V
-7.0V
-6.0V
V
G
= -5.0V
150
80
100
40
50
0
0
2
4
6
8
10
0
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
2.0
I
D
= -20 A
T
C
=25
o
C
Normalized R
DS(ON)
2
4
6
8
10
16
I
D
= - 30 A
V
G
= -10V
1.6
R
DS(ON)
(m
Ω
)
14
1.2
12
0.8
10
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
1.2
30
Normalized -V
GS(th)
(V)
1.2
1.4
1.0
-I
S
(A)
20
T
j
=150
o
C
T
j
=25
o
C
0.8
0.6
10
0.4
0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9581GP-HF
f=1.0MHz
10
10000
-V
GS
, Gate to Source Voltage (V)
V
DS
= - 64 V
I
D
= - 30 A
8
8000
C (pF)
6
6000
C
iss
4
4000
2
2000
C
oss
C
rss
0
0
40
80
120
160
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Operation in this
area limited by
R
DS(ON)
100us
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
-I
D
(A)
0.1
0.1
0.05
1ms
10
P
DM
T
c
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
G
80
-I
D
, Drain Current (A)
Q
G
60
-4.5V
Q
GS
Q
GD
40
20
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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