UM2300
Features
•
•
•
•
•
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW),
•
High Isolation (35 dB)
Low Loss (0.2 dB),
•
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘off ’state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘ 0 dB ’ attenuator state.
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1 MHz
2 MHz
4 MHz
200 KHz
100 KHz
Ct (pF)
400 KHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
Ω
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
=25 mA
F
1
=0.999 MHz, F
2
=1.001 MHz
1.0 WATT/ tone
25°C Stud Temperature
60
50
Thermal Resistance
1.0
°C
/ W
MSCOXXXA
10-26-04
>(34989)
DSW UM2300 <A
UM2300
TYPICAL I-V CURVE
10
10
10
2
1
0
-2
10
TYPICAL IR vs VR
150 oC
-3
10
125 oC
100 oC
If [AMPERES]
10
10
10
10
10
10
IR (A) (MEAN)
-1
-2
-3
-4
-5
-6
0.0
150 oC
125 oC
100 oC
75 oC
50 oC
25 oC
-4
10
-5
10
-6
10
-7
10
-8
10
75 oC
50 oC
25 oC
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
100 200 300 400 500 600 700 800 900 1000
Vf [VOLTS]
VR (Volts)
TYPICAL RS vs FORWARD BIAS CURRENT
1000
TYPICAL Rp vs REVERSE VOLTAGE
9
10
8
10
10KHz
20KHz
40KHz
100KHz
200KHz
6
10
5
10
400KHz
1MHz
2MHz
4MHz
10MHz
100
7
10
Rs (Ohms)
10
1
Rp (OHMS)
.01
.1
1
10
100
4
10
.1
3
10
If (mA)
0
10
1
10
REVERSE VOLTAGE (VOLTS)
2
10
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <a
UM2300
TYPICAL THERMAL IMPEDANCE
10
0.0
-0.5
TYPICAL TCVf vs If
THERMAL IMPEDANCE - (C/W)
DELTA
125 oC
No Heatsink
TCVf [mV/oC]
1
-1.0
-1.5
-2.0
-2.5
-3.0
With Heatsink
.1
.01
1
10
100
1000
10
-3
10
-2
Pt - PULSE TIME - (ms)
-1
10
If [AMPERES]
10
0
10
1
TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT
40
f1 = F +/- 1 KHz
f2 = F +/- 1 KHz
70
POWER LEVEL/TONE (dBm)
35
500KHz 250KHz 150KHz
65
25
55
20
50
TAU = 0.1 ms
15
1
2
3
4
5
6
7 8
10
45
If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA)
MSCOXXXA 11-10-04
>(34989)
IP3 (dBm)
30
60
DSW UM2300 <A
UM2300
UM2300
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <A
UM2300
UM2300S
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <A
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