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C322C102Z3R5TA7301

产品描述Ceramic Capacitor, Ceramic, 25V, 80% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.001uF, 2012,
产品类别无源元件    电容器   
文件大小965KB,共16页
制造商KEMET(基美)
官网地址http://www.kemet.com
标准
下载文档 详细参数 全文预览

C322C102Z3R5TA7301概述

Ceramic Capacitor, Ceramic, 25V, 80% +Tol, 20% -Tol, X7R, -/+15ppm/Cel TC, 0.001uF, 2012,

C322C102Z3R5TA7301规格参数

参数名称属性值
是否Rohs认证符合
Objectid711871099
包装说明, 2012
Reach Compliance Codenot_compliant
ECCN代码EAR99
YTEOL6
电容0.001 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度6.6 mm
JESD-609代码e3
长度5.08 mm
负容差20%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式Radial
包装方法TR
正容差80%
额定(直流)电压(URdc)25 V
系列C(SIZE)C-GOLDMAX
尺寸代码2012
温度特性代码X7R
温度系数15% ppm/°C
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子节距5.08 mm
宽度3.18 mm

文档预览

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MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
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