RB083L-20
Diodes
Schottky barrier diode
RB083L-20
!Applications
High frequency rectification
For switching power supply
!External
dimensions
(Units : mm)
1.5±0.2
!Features
1) Compact power mold type. (PMDS)
2) Ultra low V
F
/ Low I
R
.
3) I
O
=5A guaranteed despite the size.
CATHODE MARK
4.5±0.2
1.2±0.3
5
7
0.1
+0.02
−0.1
2.0±0.2
2.6±0.2
!Construction
Silicon epitaxial planar
ROHM : PMDS
EIAJ :
−
JEDEC : SOD-106
Date of manufacture EX. 1999.12
→
9,C
!Absolute
maximum ratings
(Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
∗
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
25
20
5
70
125
−40~+125
Unit
V
V
A
A
°C
°C
Peak forward surge current
(60Hz 1
)
Junction temperature
Storage temperature
∗
When mounted on alumina PCBs (82×30×1.0mm), Tc Max.=90°C
!Electrical
characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
−
−
Typ.
−
−
Max.
0.39
500
Unit
V
µA
Conditions
I
F
=3.0A
V
R
=20V
5.0±0.3
RB083L-20
Diodes
!Electrical
characteristic curves
(Ta=25°C)
10
1
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
10000
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT : I
R
(A)
Ta=125°C
100m
1
Ta=125°C
10m
1000
100m
Ta=75°C
Ta=75°C
1m
Ta=25°C
100µ
100
10m
Ta=25°C
1m
0
0.1
0.2
0.3
0.4
0.5
10µ
0
10
20
30
40
10
0
10
20
30
FORWARD
VOLTAGE
: V
F
(V)
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE
: V
R
(V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Cpacitance between terminals
characteristics
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
7.0
DC
6.0
D=0.8
5.0
4.0 D=0.5
sine wave
3.0 D=0.3
D=0.2
2.0
D=0.1
D=0.05
1.0
0.0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (°C)
8.0
7.0
6.0
5.0
4.0
3.0
DC
D=0.8
D=0.5
sine wave
D=0.3
D=0.2
D=0.1
2.0 D=0.05
1.0
0.0
0
25
50
75
100
125
CASE TEMPERATURE : Tc (˚C)
Fig.4 Derating curve (lo-Ta)
(When mounted on
alumina PCBs)
Fig.5 Derating curve (lo-Tc)
(When mounted on
alumina PCBs)
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