Data Sheet
AEC-Q101 Qualified
Schottky Barrier Diode
RB162L-40TF
Applications
General rectification
Dimensions
(Unit : mm)
Land
size figure
(Unit : mm)
2.0
2.0
2.6±0.2
4.5±0.2
4
①
2
②
0.1±0.02
0.1
5.0±0.3
Features
1)Small power mold type. (PMDS)
2)High reliability.
1.2±0.3
1.5±0.2
2.0±0.2
PMDS
Structure
Silicon epitaxial planer
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
①
②
Taping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3
5.5±0.05
1.75±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on glass epoxy board
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Limits
40
40
1
20
150
40
to
150
Unit
V
V
A
A
C
C
Min.
-
-
Typ.
-
-
Max.
0.55
0.1
Unit
V
mA
Conditions
I
F
=1.0A
V
R
=40V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
5.3±0.1
0.05
9.5±0.1
2011.12 - Rev.A
12±0.2
4.2
RB162L-40TF
Data Sheet
1000
Ta=150°C
REVERSE CURRENT:I
R
(mA)
FORWARD CURRENT:I
F
(A)
Ta=125°C
100
Ta=-25°C
10000
1000
100
10
1
0.1
0.01
Ta=150°C
Ta=125°C
Ta=75°C
10
Ta=25°C
Ta=25°C
Ta=75°C
Ta=-25°C
1
0
100
200
300
400
500
600
0.001
0
10
20
30
40
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
f=1MHz
Osc.Lvl.=20mV
FORWARD VOLTAGE:V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
550
545
540
535
530
525
520
515
510
505
AVE:517.1mV
Ta=25°C
I
F
=1.0A
n=30pcs
100
10
1
0
10
20
30
500
V
F
DISPERSION MAP
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
5
Ta=25°C
V
R
=40V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
220
Ta=25°C
f=1MHz
n=20pcs
4
REVERSE CURRENT:I
R
(mA)
210
200
3
190
2
180
AVE:181.3pF
1
AVE:2.0mA
170
0
I
R
DISPERSION MAP
160
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
RB162L-40TF
Data Sheet
100
20
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
90
AVE:82.2A
15
80
10
70
I
FSM
8.3ms
50
I
FSM
DISPERSION MAP
1cyc
60
5
AVE:8.667ns
0
trr DISPERSION MAP
1000
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
8.3ms
200
150
I
FSM
t
1cyc
100
100
50
10
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
1.0
D.C.
0.8
D=1/2
Sin(θ＝180)
0.6
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
Rth(j-a)
0.4
10
0.2
1
0.001
0.01
0.1
1
10
100
1000
0.0
0.0
0.5
1.0
1.5
2.0
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.12 - Rev.A
RB162L-40TF
Data Sheet
0.2
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.15
REVERSE POWER
DISSIPATION:P
R
(W)
2
DC
1.5
D=1/2
1
Sin(θ＝180)
0.5
0A
0V
t
T
D=t/T
Io
V
R
V
R
=20V
Tj=150°C
0.1
D=1/2
0.05
Sin(θ＝180)
0
0
10
20
30
40
0
0
25
50
75
100
125
150
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
2
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1.5
D=1/2
1
Sin(θ＝180)
0.5
0A
0V
t
T
D=t/T
Io
V
R
V
R
=20V
Tj=150°C
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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