Product Specification
IXD5120
Ultra Small, Low Power Consumption Voltage Detector
FEATURES
Accuracy ± 2% at V
DF
≥ 1.5 V or ±0.03 V
Low Power Consumption at 0.6 μA typical
at V
DF
= 2.7 V, V
IN
= 2.97 V
Detect Voltage Range 0.7 V – 5.0 V in 0.1 V
increments
Operating Voltage Range 0.7 V – 6.0 V
0
Detect Voltage Temperature Drift ±100 ppm/ C
Output Configuration CMOS (Version C) or N-
channel Open Drain (N Version)
0
Operating Ambient Temperature - 40 + 85 C
Packages : USP-3 and SSOT-24
EU RoHS Compliant, Pb Free
DESCRIPTION
The IXD5120 are highly precise, low power
consumption,
CMOS
voltage
detectors,
manufactured using laser trimming technology.
With low power consumption and high accuracy, the
series is suitable for precision mobile equipment.
The IXD5120 in ultra small packages are ideally
suited for high-density PC boards.
The IXD5120 is available in both CMOS and N-
channel open drain output configurations
Detector is available in USP-3 and SSOT-24
packages.
APPLICATIONS
Microprocessor reset circuitry
Memory battery back-up circuits
Power-on reset circuits
Power failure detection
System battery life and charge voltage monitors
TYPICAL APPLICATION CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTIC
Pull-up Resistor R
PL
used with N-channel output configuaration only
IXD5120x272xx
Supply Current vs. Input Voltage
PS034301-0515
PRELIMINARY
1
Product Specification
IXD5120
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Input Voltage
Output Current
Output
Voltage
CMOS Output
N-channel Open Drain
USP-3
SSOT-24
P
D
T
OPR
T
STG
SYMBOL
V
IN
I
OUT
V
OUT
RATINGS
– 0.3 ~ +7.0
10
– 0.3 ~ V
IN
+ 0.3
– 0.3 ~ +7.0
120
150
– 40 ~ + 85
– 55 ~ +125
UNITS
V
mA
V
V
mW
0
0
Power Dissipation
2)
Operating Temperature Range
Storage Temperature Range
All voltages are in respect to V
SS
C
C
ELECTRICAL OPERATING CHARACTERISTICS
Ta = 25
0
C
PARAMETER
Operating Voltage
Detect Voltage
Hysteresis Width
Supply Current1
Supply Current2
SYMBOL
V
IN
V
DF
V
HYS
I
SS1
I
SS2
V
IN
= 0.7 V
I
OUTN
V
IN
= 1.0 V
V
IN
= 2.0 V
V
IN
= 3.0 V
V
IN
= 4.0 V
V
IN
= 6.0 V
Version C
Version N
CONDITIONS
V
DF(T)
= 1.0 – 5.0 V
V
DF(T)
= 1.0 – 5.0 V
V
DF(T)
= 1.0 – 5.0 V
V
IN
= V
DF(T)
x 1.1
V
IN
= V
DF(T)
x 0.9
V
OUT
= 0.5 V
V
OUT
= 0.3 V
V
OUT
= 0.1 V
V
OUT
= 0.1 V, 1.0 V < V
DF(T)
≤ 2.0 V
V
OUT
= 0.1 V, 2.0 V < V
DF(T)
≤ 3.0 V
V
OUT
= 0.1 V, 3.0 V < V
DF(T)
≤ 4.0 V
V
OUT
= 0.1 V, 4.0 V < V
DF(T)
V
OUT
= 5.5 V
V
IN
= V
DF(T)
x 0.9, V
OUT
= 0 V
V
IN
= 6.0 V, V
OUT
= 6.0 V
- 40
0
C ≤ T
OPR
≤ 85
0
C
t
DF
t
DR
V
IN
= 6.0 V
0.7 V, from V
IN
= V
DF
to V
OUT
= 0.5 V
V
IN
= 0.7 V
6.0 V, from V
IN
= V
DR
to V
OUT
= V
DR6)
1)
MIN.
0.7
V
DF
x
0.03
TYP.
E-1
V
DF
x
0.05
E-2
2)
E-3
2)
0.57
0.56
0.30
0.71
1.41
1.77
1.96
-0.96
-0.001
0.001
± 100
30
20
2)
MAX.
6.0
V
DF
x
0.07
UNIT
V
V
V
µA
µA
CIRCUIT
Output Current
0.09
0.08
0.05
0.46
1.15
1.44
1,61
mA
I
OUTP3)
Leakage Current
Detect Voltage
Temperature
Characteristics
Detect Delay Time
4)
Release Delay Time
5)
NOTE:
1)
2)
3)
4)
5)
6)
I
LEAK
-0.60
0.10
µA
ppm/
0
C
100
100
µs
µs
V
DF(T
) is a nominal detect voltage
Please refer to the table named Detect Voltage Accuracy and Supply Current Specifications
IXD5120C version only
Delay time from the moment, when V
IN
= V
DF
to the moment, when V
OUT
= 0.5 V, at V
IN
falling from 6.0 V to 0.7 V
Delay time from the moment, when V
IN
= V
DR
to the moment, when V
OUT
= V
DR
Release voltage (V
DR
= V
DF
+ V
HYS
)
PS033801-0515
PRELIMINARY
2
Product Specification
IXD5120
ELECTRICAL OPERATING CHARACTERISTICS (CONTINUED)
Detect Voltage Accuracy and Supply Current Specification
SYMBOL
NOMINAL DETECT
VOLTAGE
V
DF(T)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
E-1
DETECT VOLTAGE
V
DF
(V)
MIN.
MAX.
0.970
1.030
1.070
1.130
1.170
1.230
1.270
1.330
1.370
1.430
1.470
1.530
1.568
1.632
1.666
1.734
1.764
1.836
1.862
1.938
1.960
2.040
2.058
2.142
2.156
2.244
2.254
2.346
2.352
2.448
2.450
2.550
2.548
2.652
2.646
2.754
2.744
2.856
2.842
2.958
2.940
3.060
3.038
3.162
3.136
3.264
3.234
3.366
3.332
3.468
3.430
3.570
3.528
3.672
3.626
3.774
3.724
3.876
3.822
3.978
3.920
4.080
4.018
4.182
4.116
4.284
4.214
4.386
4.312
4.488
4.410
4.590
4.508
4.692
4.606
4.794
4.704
4.896
4.802
4.998
4.900
5.100
E-2
SUPPLY CURRENT1
I
SS1
(μA)
TYP.
MAX.
E-3
SUPPLY CURRENT2
I
SS2
(μA)
TYP.
MAX.
0.5
1.4
0.4
1.35
0.6
1.7
0.5
1.60
0.7
1.9
0.6
1.80
PS034301-0515
PRELIMINARY
3
Product Specification
IXD5120
PIN CONFIGURATION
USP-3
(BOTTOM VIEW)
SSOT-24
(TOP VIEW)
PIN ASSIGNMENT
PIN NUMBER
SSOT-24
USP-3
4
1
3
2
2
3
1
PIN NAME
V
IN
V
OUT
V
SS
NC
FUNCTIONS
Power Input
Output Voltage (Detect “LOW”)
Ground
No Connection
BLOCK DIAGRAM
IXD5120C
IXD5120N
Diodes inside the circuits are ESD protection diodes and parasitic diodes.
BASIC OPERATION
Operation of the IXD5120 in a typical application circuit is exlained by the timing diagram shown below.
Note: To simplfy explanation, an operation time of the circuit is not included.
PS033801-0515
PRELIMINARY
4
Product Specification
IXD5120
When input voltage V
IN
is higher than detect voltage V
DF
, output voltage V
OUT
is equal input voltage V
IN
. (Output
of the IXD5120N version with N-channel open drain is in high impedance state.)
When input voltage V
IN
falls below detect voltage V
DF
, output voltage V
OUT
becomes equal to the ground voltage
V
SS
level.
When input voltage V
IN
falls below minimum operating voltage V
MIN
, output becomes unstable. In this condition,
V
OUT
is equal pull-up voltage, which is V
IN
in typical application.
When input voltage V
IN
rises above the minimum operating voltage V
MIN
, output keeps the ground voltage level
V
SS
, until V
IN
becomes equal or higher than a release voltage V
DR
.
When the input voltage V
IN
rises above the release voltage V
DR
, output voltage V
OUT
becomes equal to the input
voltage V
IN
. (Output of the IXD5120N version with N-channel open drain is in high impedance state.)
The difference between V
DR
and V
DF
represents the hysteresis width.
TYPICAL APPLICATION CIRCUIT
IXD5120C
IXD5120N
LAYOUT AND USE CONSIDERATIONS
1. The IC may malfunction if absolute maximum ratings are exceeded.
2. To stabilize the IC's operations, please, ensure that V
IN
rise and fall times are more than several μs/V.
3. IXD5120N version with N-channel open drain configuration is recommended, when a resistive divider is
used to set V
IN
voltage (see figure below). Voltage drop at resistor R
IN
caused by supply and load currents,
changes level of detect and release voltages. Those errors are not constant because of the fluctuation of
currents. In addition, oscillation may occur if voltage drop caused by load or transient current exceeds
hysteresis V
HYS
= V
DR
- V
DF
. In such cases, please ensure that R
IN
is less than 10 kΩ and that C is more
than 0.1 μF.
IXD5120N Recommended Pull-up Resistors Value
INPUT VOLTAGE RANGE
0.7V~6.0V
0.8V~6.0V
1.0V~6.0V
PULL-UP RESISTANCE
≥ 220kΩ
≥ 100kΩ
≥ 33kΩ
PS034301-0515
PRELIMINARY
5
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