AP9416GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Ultra_Low On-resistance
▼
Fast Switching Characteristic
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G
S
S
S
30V
3.2mΩ
25A
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
25
20
70
3.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
35
Unit
℃/W
Data and specifications subject to change without notice
1
200809043
AP9416GM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=16A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=25A
V
DS
=30V, V
GS
=0V
V
GS
=+20V
I
D
=20A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=6Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
25
-
-
-
21
7.5
9.5
11
8
44
28
780
225
Max. Units
-
3.2
6.5
3
-
1
25
+100
34
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
2450 3900
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=3A, V
GS
=0V
I
S
=2.9A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
41
41
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9416GM
80
60
o
T
A
=25 C
I
D
, Drain Current (A)
60
I
D
, Drain Current (A)
10V
7.0 V
6.0 V
5.0 V
V
G
= 4.0 V
T
A
= 150 C
50
o
10V
7.0 V
6.0 V
5.0 V
V
G
= 4 .0 V
40
40
30
20
20
10
0
0
0
1
1
2
2
0
0
0
1
1
2
2
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
1.6
I
D
= 16 A
T
A
=25
℃
1.4
I
D
= 18 A
V
G
=10V
Normalized R
DS(ON)
4
R
DS(ON)
(m
Ω
)
1.2
1.0
3
0.8
2
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
1.2
8
Normalized V
GS(th)
(V)
1.2
1.0
I
S
(A)
6
T
j
=150
o
C
4
T
j
=25
o
C
0.8
0.6
2
0.4
0
0.2
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9416GM
12
10000
f=1.0MHz
I
D
= 20 A
10
V
GS
, Gate to Source Voltage (V)
8
C
iss
C (pF)
V
DS
= 15 V
6
1000
C
oss
4
C
rss
2
0
0
10
20
30
40
50
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
100us
10
Duty factor=0.5
1ms
10ms
0.2
0.1
0.1
I
D
(A)
0.05
1
100ms
1s
0.1
0.02
P
DM
0.01
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
DC
R
thia
=125
℃/W
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
NOM
MAX
8
7
6
5
E1
E
A
A1
B
c
D
E
E1
e
1.35
0.10
0.33
0.19
4.80
5.80
3.80
1.55
0.18
0.41
0.22
4.90
6.15
3.90
1.27 TYP
0.254 TYP
1.75
0.25
0.51
0.25
5.00
6.50
4.00
1
2
3
4
e
B
G
L
α
0.38
0.00
－
4.00
0.90
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
9416GM
YWWSSS
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
