UNISONIC TECHNOLOGIES CO., LTD
81CXXX/81NXXX
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
DESCRIPTION
The UTC
81CXXX
and
81NXXX
series are good
performance voltage detector and manufactured by CMOS
technologies with highly accurate, low power consumption. A
delay circuit is built-in to each detector, therefore, peripherals
are unnecessary and high density mounting is possible. Detect
voltage is extremely accurate with minimal temperature drift.
Both CMOS and N-channel open drain output configurations are
available.
CMOS IC
1
3
2
1
SOT-89
SOT-23
1
SOT-223
FEATURES
*Highly Accurate : Detect voltage ± 2%
*Built-In Delay time : 1ms ~ 50ms,
50ms ~ 200ms,
200ms ~ 400ms,
*Detect Voltage Temperature Characteristics:
TYP± 100ppm/℃
*Wide Operating Voltage Range : 0.7V ~ 10.0V
*Low Current Consumption : TYP 1.0
μA
(V
IN
=2.0V)
1
TO-92
Lead-free:
81CXXXL/81NXXXL
Halogen-free: 81CXXXG/81NXXXG
ORDERING INFORMATION
CMOS:
Normal
81Cxx-①-AA3-B-R
81Cxx-①-AB3-E-R
81Cxx-①-AE3-3-R
81Cxx-①-AE3-5-R
81Cxx-①-AE3-2-R
81Cxx-①-T92-D-B
81Cxx-①-T92-E-B
81Cxx-①-T92-D-K
81Cxx-①-T92-E-K
Ordering Number
Lead Free Plating
81CxxL-①-AA3-B-R
81CxxL-①-AB3-E-R
81CxxL-①-AE3-3-R
81CxxL-①-AE3-5-R
81CxxL-①-AE3-2-R
81CxxL-①-T92-D-B
81CxxL-①-T92-E-B
81CxxL-①-T92-D-K
81CxxL-①-T92-E-K
Ordering Number
Lead Free Plating
81NxxL-①-AA3-B-R
81NxxL-①-AB3-E-R
81NxxL-①-AE3-3-R
81NxxL-①-AE3-5-R
81NxxL-①-AE3-2-R
81NxxL-①-T92-D-B
81NxxL-①-T92-E-B
81NxxL-①-T92-D-K
81NxxL-①-T92-E-K
Halogen Free
81CxxG-①-AA3-B-R
81CxxG-①-AB3-E-R
81CxxG-①-AE3-3-R
81CxxG-①-AE3-5-R
81CxxG-①-AE3-2-R
81CxxG-①-T92-D-B
81CxxG-①-T92-E-B
81CxxG-①-T92-D-K
81CxxG-①-T92-E-K
①:Delay
Time
Package
Duration
Code
SOT-223
SOT-89
SOT-23
SOT-23
P
1 ~ 50 ms
Q
50 ~ 200 ms
SOT-23
200 ~ 400 ms R
TO-92
TO-92
TO-92
TO-92
①:Delay
Time
Package
Duration
Code
SOT-223
SOT-89
SOT-23
SOT-23
H
1 ~ 50 ms
J
50 ~ 200 ms
SOT-23
200 ~ 400 ms K
TO-92
TO-92
TO-92
TO-92
Pin Assign.
1 2 3
O G I
O I G
O G I
G O I
I O G
I G O
O I G
I G O
O I G
Pin Assign.
1 2 3
O G I
O I G
O G I
G O I
I O G
I G O
O I G
I G O
O I G
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
N-Channel:
Normal
81Nxx-①-AA3-B-R
81Nxx-①-AB3-E-R
81Nxx-①-AE3-3-R
81Nxx-①-AE3-5-R
81Nxx-①-AE3-2-R
81Nxx-①-T92-D-B
81Nxx-①-T92-E-B
81Nxx-①-T92-D-K
81Nxx-①-T92-E-K
Halogen Free
81NxxG-①-AA3-B-R
81NxxG-①-AB3-E-R
81NxxG-①-AE3-3-R
81NxxG-①-AE3-5-R
81NxxG-①-AE3-2-R
81NxxG-①-T92-D-B
81NxxG-①-T92-E-B
81NxxG-①-T92-D-K
81NxxG-①-T92-E-K
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
Bulk
Note: 1. Pin assignment: I:V
IN
O:V
OUT
G:V
SS
2. xx: Output Voltage, refer to Marking Information.
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QW-R502-039,L
81CXXX/81NXXX
ORDERING INFORMATION(Cont.)
81CxxL-
1
CMOS IC
- AB3-x-R
(1)Packing Type
(2)Pin Code
(3)Package Type
(4)Delay Time
(5)Lead Plating
(6)Output Voltage Code
(7)Output Configuration
(1) R: Tape Reel, B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23,
T92: TO-92
(4)
1
:refer to Delay Time
(5) G: Halogen Free, L: Lead Free,
Blank: Pb/Sn
(6) xx: refer to Marking Information
(7) C: CMOS, N: N-Cannel
MARKING INFORMATION
PACKAGE
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
VOLTAGE CODE
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
MARKING
SOT-223
SOT-89
TO-92
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
PACKAGE INTEGER* CODE DECIMAL** CODE
1.
1
.0
A
2.
2
.1
B
3.
3
.2
C
4.
4
.3
D
5.
5
.4
E
SOT-23
6.
6
.5
F
.6
G
.7
H
.8
J
.9
K
* Represents the integer of the Detect Voltage
** Represents the decimal number of the Detect Voltage
MARKING
EXAMPLE:
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QW-R502-039,L
81CXXX/81NXXX
BLOCK DIAGRAM
V
IN
CMOS IC
Delay
Circuit
V
REF
V
OUT
Vss
CMOS Output
V
IN
V
OUT
Delay Circuit
V
REF
Vss
N-channel Open Drain Output
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QW-R502-039,L
81CXXX/81NXXX
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
SYMBOL
V
IN
I
OUT
CMOS IC
RATINGS
UNIT
Input Voltage
12
V
Output Current
50
mA
CMOS
V
SS
-0.3 ~ V
IN
+0.3
Output Voltage
V
OUT
V
N-Ch open drain
V
SS
-0.3 ~ 9
SOT-223
800
SOT-23
150
Power Dissipation
P
D
mW
SOT-89
500
TO-92
300
Operating Temperature
T
OPR
-30 ~ +80
℃
Storage Temperature
T
STG
-40 ~ +125
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-223
Thermal Resistance Junction-Case
SOT-23
SOT-89
TO-92
θ
JC
SYMBOL
RATINGS
15
200
100
45
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Detection voltage (1.0V ~ 1.9V)
PARAMETER
SYMBOL CIRCUIT
Detect Voltage
Hysteresis Range
Operating Voltage
Supply Current
V
DF
V
HYS
V
IN
I
SS
1
1
1
2
3
Output Current
I
OUT
4
V
DF
Temperature Characteristics
Transient Delay Time
(V
DR
V
OUT
inversion)
ΔV
DF
ΔT
OPR
×V
DF
t
DLY
*
5
V
IN
changes from
0.6V ~ 10V
50
V
DF
=1.6V ~ 6.0V
V
IN
=1.5V
V
IN
=5.0
N-ch
V
DS
=0.5V, V
IN
=1.0V
P-ch
V
DS
=2.1V, V
IN
=8.0V
(CMOS output)
TEST CONDITIONS
MIN
V
DF
(T)
X0.98
V
DF
X0.02
0.7
MAX UNIT
V
DF
(T)
V
DF
(T)
V
X1.02
V
DF
V
DF
V
X0.05 X0.08
10.0
V
0.9
2.6
μA
2.0
4.2
μA
2.2
-15.4
±100
200
mA
mA
ppm/℃
ms
TYP
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81CXXX/81NXXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT
Detect Voltage
Hysteresis Range
Operating Voltage
Supply Current
V
DF
V
HYS
V
IN
I
SS
1
1
1
2
3
Output Current
I
OUT
4
V
DF
Temperature Characteristics
Transient Delay Time
(V
DR
V
OUT
inversion)
ΔV
DF
ΔT
OPR
×V
DF
t
DLY
*
5
V
IN
changes from
0.6V ~ 10V
TEST CONDITIONS
50
V
DF
=1.6V ~ 6.0V
V
IN
=2.0V
V
IN
=5.0V
N-ch
V
DS
=0.5V, V
IN
=2.0V
P-ch
V
DS
=2.1V, V
IN
=8.0V
(CMOS output)
TEST CONDITIONS
MIN
V
DF
(T)
X0.98
V
DF
X0.02
0.7
TYP
CMOS IC
MAX UNIT
V
DF
(T)
V
DF
(T)
V
X1.02
V
DF
V
DF
V
X0.05 X0.08
10.0
V
1.0
3.0
μA
2.0
4.2
μA
7.9
-15.4
±100
200
mA
mA
ppm/℃
ms
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT
Detect Voltage
Hysteresis Range
Operating Voltage
Supply Current
V
DF
V
HYS
V
IN
I
SS
1
1
1
2
3
Output Current
I
OUT
4
V
DF
Temperature Characteristics
Transient Delay Time
(V
DR
V
OUT
inversion)
ΔV
DF
ΔT
OPR
×V
DF
t
DLY
*
5
V
DF
=1.6V ~ 6.0V
V
IN
=3.0V
V
IN
=5.0V
N-ch
V
DS
=0.5V, V
IN
=3.0V
P-ch
V
DS
=2.1V, V
IN
=8.0V
(CMOS output)
MIN
V
DF
(T)
X0.98
V
DF
X0.02
0.7
MAX UNIT
V
DF
(T)
V
DF
(T)
V
X1.02
V
DF
V
DF
V
X0.05 X0.08
10.0
V
1.3
3.4
μA
2.0
4.2
μA
10.1
-15.4
±100
mA
mA
ppm/℃
200
ms
TYP
V
IN
changes from
0.6V ~ 10V
50
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