AP4569GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Fast Switching Performance
▼
RoHS Compliant
D1
D2
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
S2
G1
40V
36mΩ
5.8A
-40V
68mΩ
-4.2A
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
N-channel
40
±20
5.8
4.6
20
2
0.016
-55 to 150
-55 to 150
P-channel
-40
±20
-4.2
-3.4
-20
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
62.5
Unit
℃/W
Data and specifications subject to change without notice
200628063-1/7
AP4569GM
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=10mA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
5
-
-
-
7
1.2
3.4
4
9
18
4
380
70
55
1.5
Max. Units
-
-
36
60
3
-
1
25
±100
12
-
-
-
-
-
-
610
-
-
2.3
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=40V, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
GS
=±20V
I
D
=5A
V
DS
=30V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=20Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.5A, V
GS
=0V
I
S
=5A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
19
13
Max. Units
1.3
-
-
V
ns
nC
2/7
AP4569GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Test Conditions
V
GS
=0V, I
D
=-10mA
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-4A
V
DS
=-40V, V
GS
=0V
V
DS
=-32V, V
GS
=0V
V
GS
=±20V
I
D
=-4A
V
DS
=-30V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=20Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-40
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
-
-
4
-
-
-
7
1.3
3.5
6
8
24
7
440
80
60
5.6
Max. Units
-
-
68
100
-3
-
-1
-25
±100
12
-
-
-
-
-
-
700
-
-
8.4
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃,I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1.5A, V
GS
=0V
I
S
=-4A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
22
14
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
3/7
AP4569GM
N-Channel
20
20
T
A
=25 C
o
15
I
D
, Drain Current (A)
10
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
A
= 150 C
o
15
10V
7.0V
5.0V
4.5V
V
G
=3.0V
10
5
5
0
0
2
4
6
8
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.0
I
D
=3A
T
A
=25 C
o
I
D
=5A
V
G
=10V
60
Normalized R
DS(ON)
2
4
6
8
10
1.6
R
DS(ON0
(m
Ω
)
40
1.2
20
0.8
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60.0
10
8
T
j
=150
o
C
6
T
j
=25
o
C
R
DS(ON)
(mΩ)
I
S
(A)
40.0
V
GS
=4.5V
4
V
GS
=10V
2
0
0
0.2
0.4
0.6
0.8
1
1.2
20.0
0
5
10
15
20
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
4/7
AP4569GM
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
I
D
=5A
V
DS
= 30 V
8
C
iss
C (pF)
100
4
C
oss
C
rss
0
0
3
6
9
12
15
18
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
I
D
(A)
10ms
1
0.1
0.1
0.05
0.02
100ms
T
A
=25
o
C
Single Pulse
1s
10s
DC
10
100
0.01
P
DM
0.01
t
T
Single Pulse
0.1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.01
0.1
1
0.001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V
I
D
, Drain Current (A)
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
4.5V
Q
GS
Q
GD
20
10
Charge
0
Q
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
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