电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RD48F4444PPVTQ0

产品描述8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
产品类别存储    存储   
文件大小1MB,共102页
制造商Intel(英特尔)
官网地址http://www.intel.com/
下载文档 详细参数 全文预览

RD48F4444PPVTQ0概述

8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56

RD48F4444PPVTQ0规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Intel(英特尔)
零件包装代码BGA
包装说明11 X 11 MM, 1.40 MM HEIGHT, SCSP-88/80
针数88/80
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
最长访问时间88 ns
其他特性SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块TOP
JESD-30 代码S-PBGA-B80
JESD-609代码e0
长度11 mm
内存密度1073741824 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量80
字数67108864 words
字数代码64000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-30 °C
组织64MX16
封装主体材料PLASTIC/EPOXY
封装代码LFBGA
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
编程电压1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层TIN LEAD
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
类型NOR TYPE
宽度11 mm

文档预览

下载PDF文档
Intel StrataFlash
®
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
— 40 MHz with zero wait states, 20 ns clock-to-
• 64 user-programmable OTP bits
data output synchronous-burst read mode
• Additional 2048 user-programmable OTP bits
— 25 ns asynchronous-page read mode
— Selectable OTP Space in Main Array:
— 4-, 8-, 16-, and continuous-word burst mode
• 4x32KB parameter blocks + 3x128KB main
— Buffered Enhanced Factory Programming
blocks (top or bottom configuration)
(BEFP) at 5 µs/byte (Typ)
— Absolute write protection: V
PP
= V
SS
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Power-transition erase/program lockout
Architecture
— Individual zero-latency block locking
— Multi-Level Cell Technology: Highest Density
— Individual block lock-down
at Lowest Cost
Software
— Asymmetrically-blocked architecture
— 20 µs (Typ) program suspend
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) erase suspend
bottom configuration
— Intel
®
Flash Data Integrator optimized
— 128-KByte main blocks
— Basic Command Set and Extended Command
Voltage and Power
Set compatible
— V
CC
(core) voltage: 1.7 V – 2.0 V
— Common Flash Interface capable
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
Density and Packaging
— Standby current: 55 µA (Typ) for 256-Mbit
— 64/128/256-Mbit densities in 56-Lead TSOP
— 4-Word synchronous read current:
package
13 mA (Typ) at 40 MHz
— 64/128/256/512-Mbit densities in 64-Ball
Quality and Reliability
Intel
®
Easy BGA package
— Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
®
QUAD+ SCSP
— Minimum 100,000 erase cycles per block
— 16-bit wide data bus
— ETOX™ VIII process technology (130 nm)
High performance
The Intel StrataFlash
®
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
®
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
®
130 nm ETOX™ VIII process technology.
Order Number: 306666, Revision: 001
April 2005

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2346  741  326  2577  2676  16  31  46  6  21 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved