74LVC2G00
Dual 2-input NAND gate
Rev. 12 — 8 April 2013
Product data sheet
1. General description
The 74LVC2G00 provides a 2-input NAND gate function.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC2G00DP
74LVC2G00DC
74LVC2G00GT
74LVC2G00GF
74LVC2G00GD
74LVC2G00GM
74LVC2G00GN
74LVC2G00GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
TSSOP8
VSSOP8
XSON8
XSON8
XSON8
XQFN8
XSON8
XSON8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1
1.95
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1
0.5 mm
SOT1089
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3
2
0.5 mm
plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6
1.6
0.5 mm
extremely thin small outline package; no leads;
8 terminals; body 1.2
1.0
0.35 mm
extremely thin small outline package; no leads;
8 terminals; body 1.35
1.0
0.35 mm
SOT902-2
SOT1116
SOT1203
4. Marking
Table 2.
Marking codes
Marking code
[1]
V2G00
V00
V00
VA
V00
V00
VA
VA
Type number
74LVC2G00DP
74LVC2G00DC
74LVC2G00GT
74LVC2G00GF
74LVC2G00GD
74LVC2G00GM
74LVC2G00GN
74LVC2G00GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
74LVC2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 8 April 2013
2 of 20
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
5. Functional diagram
&
1A
1B
2A
2B
1Y
B
2Y
&
Y
001aah749
001aah748
A
mna099
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74LVC2G00
1A
1
8
V
CC
1B
2
7
1Y
74LVC2G00
1A
1B
2Y
GND
1
2
3
4
001aab736
8
7
6
5
V
CC
1Y
2B
2A
2Y
3
6
2B
GND
4
5
2A
001aab737
Transparent top view
Fig 4.
Pin configuration SOT505-2 and SOT765-1
Fig 5.
Pin configuration SOT833-1, SOT1089,
SOT1116 and SOT1203
74LVC2G00
terminal 1
index area
1Y
1
V
CC
8
74LVC2G00
1A
1B
2Y
GND
1
2
3
4
8
7
6
5
V
CC
7
1A
2B
1Y
2B
2A
2A
2
6
1B
3
4
5
2Y
GND
001aae980
001aai251
Transparent top view
Transparent top view
Fig 6.
74LVC2G00
Pin configuration SOT996-2
Fig 7.
Pin configuration SOT902-2
© NXP B.V. 2013. All rights reserved.
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 12 — 8 April 2013
3 of 20
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
SOT505-2, SOT765-1, SOT833-1, SOT1089,
SOT996-2, SOT1116 and SOT1203
1A, 2A
1B, 2B
GND
1Y, 2Y
V
CC
1, 5
2, 6
4
7, 3
8
SOT902-2
7, 3
6, 2
4
1, 5
8
data input
data input
ground (0 V)
data output
supply voltage
Description
7. Functional description
Table 4.
Input
nA
L
L
H
H
[1]
Function table
[1]
Output
nB
L
H
L
H
nY
H
H
H
L
H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input voltage
output voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
[1]
Min
0.5
0.5
0.5
0.5
50
-
-
-
100
65
Max
+6.5
+6.5
V
CC
+ 0.5
+6.5
-
50
50
100
-
+150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
C
mW
Active mode
Power-down mode
V
I
< 0 V
V
O
< 0 V or V
O
> V
CC
V
O
= 0 V to V
CC
[1]
[1][2]
T
amb
=
40 C
to +125
C
[3]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8 and XQFN8 packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
74LVC2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 8 April 2013
4 of 20
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Active mode
Power-down mode
Conditions
Min
1.65
0
0
0
40
-
-
Max
5.5
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
V
C
ns/V
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
[1]
V
IH
HIGH-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
=
100 A;
V
CC
= 1.65 V to 5.5 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
24
mA; V
CC
= 3.0 V
I
O
=
32
mA; V
CC
= 4.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
OFF
input leakage current
V
I
= 5.5 V or GND; V
CC
= 0 V to 5.5 V
power-off leakage current V
I
or V
O
= 5.5 V; V
CC
= 0 V
-
-
-
-
-
-
-
-
-
0.08
0.14
0.19
0.37
0.43
0.1
0.1
0.1
0.45
0.3
0.4
0.55
0.55
5
10
V
V
V
V
V
V
A
A
V
CC
0.1
1.2
1.9
2.2
2.3
3.8
-
1.53
2.13
2.50
2.60
4.10
-
-
-
-
-
-
V
V
V
V
V
V
0.65
V
CC
-
1.7
2.0
0.7
V
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
0.8
0.3
V
CC
V
V
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.35
V
CC
V
74LVC2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 8 April 2013
5 of 20
嵌入式系统
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