AP4525GEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Performance
▼
RoHS Compliant
SO-8
S1
D2
D1
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
S2
G1
G2
40V
28mΩ
6A
-40V
42mΩ
-5A
P-CH BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
40
+16
6.0
5.0
30
2.0
0.016
-55 to 150
-55 to 150
P-channel
-40
+16
-5.0
-4.0
-30
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
200901155
AP4525GEM-HF
N-CH Electrical Characteristics@ T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.04
-
-
-
6
-
-
-
8
1.5
4
7
20
20
4
580
100
70
2
Max. Units
-
-
28
32
3
-
1
25
+30
13
-
-
-
-
-
-
930
-
-
3
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=40V, V
GS
=0V
V
GS
=+16V, V
DS
=0V
I
D
=6A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=6A
R
G
=3Ω,V
GS
=10V
R
D
=3.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.1A, V
GS
=0V
I
S
=6A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
12
Max. Units
1.8
-
-
V
ns
nC
2
AP4525GEM-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-40V, V
GS
=0V
V
GS
=+16V, V
DS
=0V
I
D
=-5A
V
DS
=-20V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-5A
R
G
=3Ω,V
GS
=-10V
R
D
=4Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
f=1.0MHz
Min.
-40
-
-
-
-0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
-
-
5
-
-
-
9
2
5
8.5
15
27
25
770
165
115
6
Max. Units
-
-
42
60
-2.5
-
-1
-25
+30
24
-
-
-
-
-
-
1230
-
-
9
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-32V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=-1.1A, V
GS
=0V
I
S
=-5A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
20
16
Max. Units
-1.8
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse
test
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4525GEM-HF
N-Channel
30
30
T
A
= 25
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
20
20
10
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.8
I
D
=4A
100
T
A
=25
o
C
Normalized R
DS(ON)
I
D
=6A
V
G
=10V
1.6
R
DS(ON)
(m
Ω
)
80
1.4
60
1.2
40
1.0
20
2
4
6
8
10
0.8
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
Normalized V
GS(th)
(V)
1.2
1.2
I
S
(A)
6
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4525GEM-HF
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
I
D
=6A
V
DS
=20V
8
C
iss
C (pF)
100
C
oss
C
rss
4
0
0
5
10
15
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
I
D
(A)
1ms
1
0.2
0.1
0.1
0.05
10ms
100ms
0.1
P
DM
t
0.02
T
0.01
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
1s
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
R
thja
=135
o
C/W
0.01
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V
G
40
V
DS
=5V
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
Q
G
4.5V
Q
GS
Q
GD
30
20
10
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
