AP4513GH-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
S1
G1
S2
G2
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
35V
32mΩ
7.7A
-35V
68mΩ
-5.5A
Description
TO-252-4L
I
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
35
±20
7.7
6.2
40
3.125
0.025
-55 to 150
-55 to 150
P-channel
-35
±20
-5.5
-4.4
-40
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Value
Max.
Max.
10
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
200627072-1/7
AP4513GH-A
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
35
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
10
-
-
-
6
2
3
8
7
20
4
460
85
60
1
Max. Units
-
-
32
54
2.5
-
1
25
±100
10
-
-
-
-
-
-
740
-
-
1.5
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=35V, V
GS
=0V
V
DS
=28V, V
GS
=0V
V
GS
=±20V
I
D
=7A
V
DS
=28V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=7A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
18
12
Max. Units
1.2
-
-
V
ns
nC
2/7
AP4513GH-A
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-35V, V
GS
=0V
V
DS
=-28V, V
GS
=0V
V
GS
=±20V
I
D
=-5A
V
DS
=-28V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-35
-
-
-
-0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
-
-
7
-
-
-
6
1.2
3
7
7
16
3
400
90
60
7.2
Max. Units
-
-
68
105
-2.5
-
-1
-25
±100
10
-
-
-
-
-
-
640
-
-
11
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃,I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-5A, V
GS
=0V
I
S
=-5A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t
≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4513GH-A
N-Channel
30
30
T
C
=25 C
o
10V
7.0V
I
D
, Drain Current (A)
5.0V
T
C
= 150 C
o
10V
7.0V
I
D
, Drain Current (A)
20
20
5.0V
4.5V
4.5V
10
10
V
G
=3.0V
0
0
1
2
3
4
5
0
0
1
2
3
4
V
G
=3.0V
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
I
D
=5A
T
C
=25 C
50
o
I
D
=7A
V
G
=10V
Normalized R
DS(ON)
1.4
R
DS(ON0
(m
Ω
)
40
1.0
30
20
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
4
3
T
j
=150
o
C
2
T
j
=25
o
C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
Normalized V
GS(th)
(V)
1.1
I
S
(A)
0.7
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4513GH-A
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
I
D
=7A
V
DS
=2 8 V
9
C
iss
6
C (pF)
100
C
oss
C
rss
3
0
0
4
8
12
16
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
0.2
1
1ms
10ms
100ms
1s
T
A
=25 C
Single Pulse
o
I
D
(A)
0.1
0.1
0.05
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
A
Rthja=75℃/W
Single Pulse
0.1
10s
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V
DS
=5V
15
V
G
o
I
D
, Drain Current (A)
T
j
=25 C
T
j
=150
o
C
Q
G
4.5V
Q
GS
Q
GD
10
5
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
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