Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
20 TQFN
Juction-to-Ambient Thermal Resistance (B
JA
) .......... +39NC/W
Junction-to-Case Thermal Resistance (B
JC
)............... +6NC/W
20 TSSOP
Junction-to-Ambient Thermal Resistance (B
JA
) ..... +37.7NC/W
Junction-to-Case Thermal Resistance (B
JC
) ............... +2NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
IN
= V
EN
= 12V, R
RT
= 12.2kI, R
ISET
= 15kI, C
VCC
= 1FF, V
CC
= V
DRV
= V
CFB
, DRAIN, COMP, OUT_,
FLT
= unconnected, V
OV
= V
CS
= V
LEDGND
= V
DIM
= V
PGND
= V
SGND
= 0V, V
GATE
= V
NDRV
, T
A
= T
J
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= 25NC.) (Note 2)
PARAMETER
Input Voltage Range
Input Voltage Range
Quiescent Supply Current
Standby Supply Current
Undervoltage Lockout
Undervoltage Lockout Hysteresis
DRV REGULATOR
Output Voltage
Dropout Voltage
Short-Circuit Current Limit
V
CC
Undervoltage Lockout
Threshold
V
CC
(UVLO) Hysteresis
UVLO
VCC
V
DRV
5.75V < V
IN
< 10V, 0.1mA < I
LOAD
< 30mA
6.5V < V
IN
< 40V, 0.1mA < I
LOAD
< 3mA
4.75
5
0.11
97
3.4
4.0
123
4.4
5.25
0.5
V
V
mA
V
mV
SYMBOL
V
IN
V
IN
I
Q
I
SH
UVLO
IN
V
IN
= V
CC
V
DIM
= 5V
V
EN
= SGND (Note 3)
V
IN
rising, V
DIM
= 5V
4
CONDITIONS
Internal LDO on
MIN
4.75
4.55
3.1
15.5
4.3
177
TYP
MAX
40
5.5
5
40
4.55
UNITS
V
V
mA
FA
V
mV
V
DO
V
IN
= 4.75V, I
OUT
= 30mA
(V
IN
- V
DRV
)
DRV shorted to GND
V
CC
rising
2
Maxim Integrated
MAX16838
Integrated, 2-Channel, High-Brightness LED Driver
with High-Voltage Boost and SEPIC Controller
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= V
EN
= 12V, R
RT
= 12.2kI, R
ISET
= 15kI, C
VCC
= 1FF, V
CC
= V
DRV
= V
CFB
, DRAIN, COMP, OUT_,
FLT
= unconnected, V
OV
= V
CS
= V
LEDGND
= V
DIM
= V
PGND
= V
SGND
= 0V, V
GATE
= V
NDRV
, T
A
= T
J
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= 25NC.) (Note 2)
PARAMETER
RT OSCILLATOR
Switching Frequency Range
Duty Cycle
Oscillator Frequency Accuracy
Synchronization Logic-High
Synchronization Logic-Low
Logic-Level Before SYNC
Capacitor
Synchronization Pulse Width
SYNC Frequency Range
PWM COMPARATOR
Leading-Edge Blanking
Propagation Delay to NDRV
SLOPE COMPENSATION
Slope Compensation Peak
Voltage per Cycle
CS LIMIT COMPARATOR
CS Threshold Voltage
CS Limit Comparator Propagation
Delay to NDRV
CS Input Current
ERROR AMPLIFIER
OUT_ Regulation Voltage
Transconductance
No-Load Gain
COMP Sink Current
COMP Source Current
MOSFET DRIVER
NDRV On-Resistance
Peak Sink Current
Peak Source Current
POWER MOSFET
Power Switch On-Resistance
Switch Leakage Current
Switch Gate Charge
I
SWITCH
= 0.5A, V
GS
= 5V
V
DRAIN
= 40V, V
GATE
= 0V
V
DRAIN
= 40V, V
GS
= 4.5V
0.15
0.003
3.1
0.35
1.2
I
FA
nC
I
SINK
= 100mA, V
IN
> 5.5V
I
SOURCE
= 100mA, V
IN
> 5.5V
V
NDRV
= 5V
V
NDRV
= 0V
1.5
1.5
0.8
0.8
4
4
I
I
A
A
Gm
A
I
SINK
I
SOURCE
(Note 4)
V
DIM
= V
OUT_
= 5V, V
COMP
= 3V
V
DIM
= 5V, V
OUT_
= V
COMP
= 0V
V
DIM
= 5V
0.9
340
1
600
50
400
400
800
800
1.1
880
V
FS
dB
FA
FA
I
CS
V
CS_MAX
V
COMP
= 3V
10mV overdrive (including leading-edge
blanking time)
0
P
V
CS
P
0.35V
-1.3
285
300
100
+0.5
315
mV
ns
FA
Voltage ramp added to CS
0.12
V
Including leading-edge blanking time
66
100
ns
ns
f
SYNC
f
SW
D
MAX
f
SW
= 200kHz
f
SW
= 2000kHz
f
SW
= 200kHz to 2MHz
V
RT
rising
V
RT
falling
3.1
50
1.1 x
f
SW
1.5 x
f
SW
200
87
83
-7.5
1.8
2.5
3.8
90
85
2000
95
91
+7.5
3.6
kHz
%
%
%
V
V
V
ns
Hz
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Maxim Integrated
3
MAX16838
Integrated, 2-Channel, High-Brightness LED Driver
with High-Voltage Boost and SEPIC Controller
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= V
EN
= 12V, R
RT
= 12.2kI, R
ISET
= 15kI, C
VCC
= 1FF, V
CC
= V
DRV
= V
CFB
, DRAIN, COMP, OUT_,
FLT
= unconnected, V
OV
= V
CS
= V
LEDGND
= V
DIM
= V
PGND
= V
SGND
= 0V, V
GATE
= V
NDRV
, T
A
= T
J
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= 25NC.) (Note 2)
PARAMETER
LED CURRENT SINKS
OUT_ Current Range
LED Strings Current Matching
Maximum Peak-to-Peak Boost
Ripple
I
OUT_
V
DIM
= 5V, V
OUT_
= 1.0V
I
OUT_
= 100mA, R
ISET
= 15kI
1% I
OUT
variation, I
OUT
= 100mA,
R
ISET
= 15kI
I
OUT_
= 100mA,
R
ISET
= 15kI
T
A
= +25NC
T
A
= -40NC to +125NC
97
95
18.7
0.3
100
100
20
1
1.23
0
P
V
CFB
P
1.3V
V
ENHI
V
EN_HYS
V
EN
= 40V
V
IH
V
IL
V
DIM_HYS
I
DIM
V
DIM
= 5V or 0
V
DIM
rising edge to 90% of set current
V
DIM
falling edge to 10% of set current
t
R
t
F
Rise time measured from 10% to 90%
Fall time measured from 90% to 10%
3.1
T
A
= +125NC
T
A
= +125NC
3.55
6
6.8
4.2
7.7
6
-600
50
10
290
121
120
50
110
+100
1000
700
600
500
5.5
4.85
9.5
8.6
-500
2.1
0.8
V
EN
rising
-0.3
1.1
1.24
71
+50
+700
+0.3
1.34
20
150
Q2
0.5
103
105
21.3
300
mA
%
V
mA
mA
mA
nA
V
FA
V
mV
nA
V
V
mV
nA
ns
ns
ns
ns
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Output Current Accuracy
OUT_ Leakage Current
Current Foldback Threshold
Voltage
CFB Input Bias Current
ENABLE COMPARATOR (EN)
Enable Threshold
Enable Threshold Hysteresis
Enable Input Current
DIM LOGIC
DIM Input Logic-High
DIM Input Logic-Low
Hysteresis
DIM Input Current
DIM to LED Turn-On Time
DIM to LED Turn-Off Time
I
OUT_
Rise Time
I
OUT_
Fall Time
LED FAULT DETECTION
LED Shorted Fault Indicator
Threshold
LED String Shorted Shutoff
Threshold
Shorted LED Detection FLAG
Delay
I
OUT_
= 20mA, R
ISET
T
A
= -40NC to +125NC
= 75kI
V
DIM
= 0V, V
OUT_
= 40V
V
V
Fs
4
Maxim Integrated
MAX16838
Integrated, 2-Channel, High-Brightness LED Driver
with High-Voltage Boost and SEPIC Controller
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= V
EN
= 12V, R
RT
= 12.2kI, R
ISET
= 15kI, C
VCC
= 1FF, V
CC
= V
DRV
= V
CFB
, DRAIN, COMP, OUT_,
FLT
= unconnected, V
OV
= V
CS
= V
LEDGND
= V
DIM
= V
PGND
= V
SGND
= 0V, V
GATE
= V
NDRV
, T
A
= T
J
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= 25NC.) (Note 2)
PARAMETER
FLT
LOGIC
Output-Voltage Low
Output Leakage Current
OVERVOLTAGE PROTECTION
OV Trip Threshold
OV Hysteresis
OV Input Bias Current
THERMAL SHUTDOWN
Thermal Shutdown
Thermal Shutdown Hysteresis
165
15
o
C
o
C
SYMBOL
V
OL
CONDITIONS
V
IN
= 4.75V and I
SINK
= 5mA
V
FILT
= 5.5V
V
OV
rising
0
P
V
OV
P
1.3V
MIN
TYP
MAX
0.4
UNITS
V
nA
V
mV
nA
-300
1.19
-100
1.23
70
+300
1.265
+100
Note 2:
All devices are 100% tested at T
A
= +125NC. Limits over temperature are guaranteed by design, not production tested.
Note 3:
The shutdown current does not include currents in the OV and CFB resistive dividers.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
