Ordering number : EN2441C
2SC3950
SANYO Semiconductors
DATA SHEET
2SC3950
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display
Video Output Applications
High-definition CRT display video output, wide-band amplifier.
Features
•
•
•
High fT : fT=2.0GHz.
Large current capacity : IC=500mA.
Micaless type : TO-126 plastic package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
30
20
3
500
1000
1.3
5
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=20V, IE=0A
VEB=2V, IC=0A
Ratings
min
typ
max
0.1
5.0
Unit
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O0108AB TI IM TC-00001648 / 21005TN (PC)/82903TN (KT)/N3098HA (KT)/N228MO/2037KI, TS No.2441-1/4
2SC3950
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
hFE1
hFE2
fT
Cob
Cre
VCE(sat)
VBE(sat)
Conditions
VCE=5V, IC=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
IC=300mA, IB=30mA
IC=300mA, IB=30mA
Ratings
min
40*
20
2.0
6.0
4.6
0.3
0.9
0.8
1.2
GHz
pF
pF
V
V
typ
max
200*
Unit
*h
FE1 : The 2SC3950 is classified by 50mA hFE as follows :
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
Package Dimensions
unit : mm (typ)
7516A-002
8.0
4.0
1.0
3.6
1.0
1.4
3.3
3.0
3.0
7.5
11.0
1
2
3
15.5
1.6
0.8
0.8
0.75
1.5
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
2.4
4.8
1.7
200
IC -- VCE
2.0mA
600
IC -- VBE
VCE=10V
Collector Current, IC -- mA
Collector Current, IC -- mA
160
1.8mA
1.6mA
1.4mA
500
400
120
1.2mA
1.0mA
300
80
0.8mA
200
0.6mA
40
0.4mA
0.2mA
IB=0mA
0
4
8
12
16
20
ITR06099
100
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR06100
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
No.2441-2/4
2SC3950
3
2
hFE -- IC
VCE=5V
5
f T -- IC
VCE=5V
Gain-Bandwidth Product, f T -- MHz
3
2
DC Current Gain, hFE
100
7
5
3
2
1.0
7
5
10
7
5
3
5
7
10
2
3
5
7 100
2
3
3
2
Collector Current, IC -- mA
3
2
7 1000
ITR06101
3
5
3
5
7
10
2
3
5
7 100
2
3
Cob -- VCB
f=1MHz
Collector Current, IC -- mA
5 7 1000
ITR06102
Cre -- VCB
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
5
7
2
5
7
2
3
5
2
Output Capacitance, Cob -- pF
10
7
5
10
7
5
3
2
3
2
1.0
1.0
3
10
1.0
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
10
7
5
ITR06103
2
1000
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
ITR06104
ASO
IC / IB=10
ICP=1000mA
s
1m
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
3
2
1.0
7
5
3
2
0.1
7
5
3
3
5
7
10
2
3
5
7 100
2
3
7
5
3
2
100
7
5
3
2
10
10
IC=500mA
DC operation
Tc=25
°
C
ms
Collector Current, IC -- mA
1.6
1.4
7 1000
ITR06105
6
5
5
7
1.0
2
3
5
7
10
2
3
5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
IT09265
PC -- Tc
Collector Dissipation, PC -- W
1.3
1.2
1.0
Collector Dissipation, PC -- W
100
120
140
160
5
4
No
0.8
0.6
0.4
0.2
0
0
20
40
60
he
at
sin
k
3
2
1
0
80
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
IT09266
Case Temperature, Tc --
°
C
IT09267
No.2441-3/4
2SC3950
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No.2441-4/4
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