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BAV70TT1
Preferred Device
Dual Switching Diode
Features
•
Pb−Free Package May be Available.* The G−Suffix Denotes a
Pb−Free Lead Finish
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ANODE
1
2
ANODE
MAXIMUM RATINGS
(TA = 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Symbol
PD
Max
70
200
500
Unit
Vdc
mAdc
mAdc
3
Max
225
1.8
R
qJA
PD
555
Unit
1
mW
mW/°C
°C/W
2
3
CATHODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient (1)
Total Device Dissipation,
FR−4 Board (2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (2)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
×
1.0 Inch Pad
CASE 463
SOT−416/SC−75
STYLE 3
360
2.9
mW
mW/°C
°C/W
°C
DEVICE MARKING
R
qJA
TJ, Tstg
345
−55
to
+150
A4
ORDERING INFORMATION
Device
BAV70TT1
BAV70TT1G
Package
SOT−416
SOT−416
(Pb-Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2003
December, 2003
−
Rev. 2
242
Publication Order Number:
BAV70TT1/D
BAV70TT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
mAdc)
Reverse Voltage Leakage Current (Note 3)
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100
W,
IR(REC) = 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
3. For each individual diode while the second diode is unbiased.
V(BR)
70
−
Vdc
IR
IR
CD
VF
−
−
−
5.0
100
1.5
mAdc
nAdc
pF
mVdc
−
−
−
−
−
−
715
855
1000
1250
6.0
1.75
ns
V
trr
VRF
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243
BAV70TT1
BAV70
RS = 50
W
IF
SAMPLING
OSCILLOSCOPE
RL = 50
W
tr
tp
I
10%
+IF
trr
OUTPUT PULSE
VR
90%
INPUT PULSE
10% OF
VR
100
W
Figure 1. Recovery Time Equivalent Test Circuit
1 KW
450
W
RS = 50
W
BAV70
SAMPLING
OSCILLOSCOPE
RL = 50
W
I
V
90%
VFR
10%
t
tr
tp
INPUT PULSE
Figure 2.
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244
OUTPUT PULSE
t
BAV70TT1
100
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
10
TA = 150°C
TA = 125°C
1.0
10
TA = 85°C
1.0
TA = 25°C
TA = -40°C
0.1
0.1
TA = 85°C
TA = 55°C
0.01
TA = 25°C
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 3. Forward Voltage
Figure 4. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 6. Normalized Thermal Response
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245
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