2SK3301
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
•
•
•
•
Low drain-source on-resistance: R
DS(ON)
= 15
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 0.65 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 720 V)
Enhancement mode: V
th
= 2.4 to 3.4 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
1
2
20
140
1
2.0
150
−55
to 150
A
W
mJ
A
mJ
°C
°C
Unit
V
V
V
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
°C/W
°C/W
1
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
257 mH, R
G
=
25
Ω,
I
AR
=
1 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2011-12-13
2SK3301
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
10 V
V
GS
0V
50
Ω
I
D
=
0.5 A
R
L
=
800
Ω
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
I
G
= ±10 μA,
V
DS
=
0 V
V
DS
=
720 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
0.5 A
V
DS
=
20 V, I
D
=
0.5 A
Min
⎯
±30
⎯
900
2.4
⎯
0.3
⎯
⎯
⎯
⎯
V
OUT
⎯
60
⎯
ns
⎯
40
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
15
0.65
165
6
21
15
Max
±10
⎯
100
⎯
3.4
20
⎯
⎯
⎯
⎯
⎯
Unit
μA
V
μA
V
V
Ω
S
pF
pF
pF
Turn-on time
Switching time
Fall time
t
on
t
f
V
DD
≈
400 V
Duty
≤
1%, t
w
=
10
μs
⎯
110
⎯
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
1 A
⎯
⎯
⎯
6
3
3
⎯
⎯
⎯
nC
nC
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
Test Condition
⎯
Min
⎯
Typ.
⎯
Max
1
Unit
A
I
DRP
V
DSF
t
rr
Q
rr
⎯
I
DR
=
1 A, V
GS
=
0 V
I
DR
=
1 A, V
GS
=
0 V
dI
DR
/dt
=
100 A/μs
⎯
⎯
⎯
⎯
⎯
⎯
1300
1.95
2
−1.7
⎯
⎯
A
V
ns
μC
Marking
Note : A line under a Lot No. identifies the indication of product Labels
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
K3301
Part No.
(or abbreviation code)
Lot No.
Note
2
2011-12-13
2SK3301
I
D
– V
DS
1
Common source
Ta
=
25°C
Pulse test
2.0
Common source
Ta
=
25°C
Pulse test
I
D
– V
DS
0.8
1.6
10
8.0
6.0
5.75
5.5
Drain current I
D
(A)
0.6
10
6.0
8.0
5.0
4.75
4.5
Drain current I
D
(A)
1.2
0.4
0.8
5.0
4.75
0.4
4.5
VGS
=
4 V
0.2
4.2
VGS
=
4 V
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
2
Common source
VDS
=
20 V
Pulse test
40
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
30
1.6
Drain current I
D
(A)
Drain-source voltage
1.2
V
DS
(V)
ID
=
1 A
20
0.8
25
10
0.4
100
0.5
0.25
Ta
= −55°C
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y
fs
⎪
– I
D
10
Common source
VDS
=
20 V
Pulse test
Ta
= −55°C
25
100
100
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
−
I
D
Forward transfer admittance
⎪Y
fs
⎪
(S)
1
Drain-source on-resistance
R
DS(ON)
(Ω)
VGS
=
10,15 V
10
0.1
0.01
0.01
0.1
1
10
1
0.1
1
10
Drain current I
D
(A)
Drain current I
D
(A)
3
2011-12-13
2SK3301
R
DS(ON)
– T
a
50
Common source
VGS
=
10 V
Pulse test
ID
=
1 A
0.5
10
Common source
Ta
=
25°C
Pulse test
I
DR
– V
DS
Drain-source on-resistance
R
DS(ON)
(Ω)
40
I
DR
Reverse drain current
(A)
1
0.25
0.1
30
20
10
10
3
1
−0.6
0.01
0
VGS
=
0 V
0
−80
−40
0
40
80
120
160
−0.2
−0.4
−0.8
−1.0
−1.2
Ambient temperature
T
a
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
5
V
th
– T
a
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
V
th
(V)
Gate threshold voltage
100
(pF)
Ciss
100
Coss
4
Capacitance C
3
2
10
1
0.1
Common source
VGS
=
0 V
f=1MHz
Ta
=
25°C
Pulse test
1
10
Crss
1
0
-80
-40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Ambient temperature
T
a
(°C)
P
D
– T
c
40
500
Dynamic input/output
characteristics
Common source
ID
=
1 A
Ta
=
25°C
Pulse test
VDS
200
300
100
200
VGS
100
4
VDS
≈
400 V
8
12
20
V
DS
(V)
(W)
400
16
30
Power dissipation P
D
Drain-source voltage
20
10
0
0
40
80
120
160
200
0
0
2
4
6
8
0
10
Case temperature T
c
(°C)
Total gate charge Q
g
(nC)
4
2011-12-13
Gate-source voltage
V
GS
(V)
2SK3301
r
th
– t
w
10
Normalized transient thermal impedance
r
th
/R
th(ch-c)
1
Duty
=
0.5
0.2
0.1
PDM
t
Single pulse
T
Duty
=
t/T
Rth(ch-c)
=
6.25°C/W
100
μ
1m
10 m
100 m
1
10
0.1
0.05
0.02
0.01
0.01
10
μ
Pulse width
t
w
(s)
Safe operating area
10
200
E
AS
– T
ch
Avalanche energy EAS (mJ)
ID max (pulsed)
*
1
ID max (continuous)
100
μs
*
160
120
1 ms
*
(A)
80
Drain current ID
0.1
DC operation
Tc
=
25°C
40
0
25
0.01
*
Single pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
100
VDSS
max
1000
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Drain-source voltage
V
DS
(V)
Test circuit
1
BVDSS
2
・L・I
AR
・
R
G
=
25
Ω,
V
DD
=
90 V EAS =
2
BVDSS
−
V
DD
5
2011-12-13
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