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2SC3774

产品描述RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN
产品类别分立半导体    晶体管   
文件大小40KB,共5页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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2SC3774概述

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN

2SC3774规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.07 A
基于收集器的最大容量1 pF
集电极-发射极最大电压12 V
配置SINGLE
最小直流电流增益 (hFE)40
最高频带ULTRA HIGH FREQUENCY BAND
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.25 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)5000 MHz
Base Number Matches1

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Ordering number:ENN1947B
NPN Epitaxial Planar Silicon Transistor
2SC3774
UHF Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF low-noise amplifiers, wide-band amplifiers.
Package Dimensions
unit:mm
2018B
[2SC3774]
0.5
Features
· Small noise figure : NF=2.2dB typ (f=0.9GHz).
· High power gain : MAG=14dB typ (f=0.9GHz).
· High cutoff frequency : f
T
=5.0GHz typ.
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.8
1.1
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
20
12
3
70
20
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
VCB=12V, IE=0
VEB=2V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
40*
5.0
0.75
0.5
1.0
Conditions
Ratings
min
typ
max
1.0
10
200*
GHz
pF
pF
Unit
µA
µA
* : The 2SC3774 is classified by 20mA h
FE
as follows :
(Note) Marking : NY
h
FE
rank : 2, 3, 4
Continued on next page.
Rank
hFE
2
40 to 80
3
60 to 120
4
100 to 200
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62404TN (PC)/N3098HA (KT)/5318MO/5137KI/O185KI, TS No.1947–1/5

 
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