AP6922GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Easy for Synchronous Buck
Converter Application
▼
RoHS Compliant & Halogen-Free
G1
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
D1
CH-1
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
30V
8.5mΩ
48A
30V
3.8mΩ
87A
G2
S2
S2
S2
D2/S1
CH-2
Description
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
G2
S2
G2 S2 S2 S2
S1/D2
D1
G1
D1
D1
D1
G1 D1 D1 D1
PMPAK
®
5x6
Units
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
CH-1
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip Limited)
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
CH-2
30
+12
87
25.7
20.5
60
3.9
-55 to 150
-55 to 150
30
+20
48
15
12
40
3.13
V
V
A
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Maximum Thermal Resistance, Junction-ambient
4
Rating
CH-1
4
40
70
CH-2
2.8
32
60
Units
℃/W
℃/W
℃/W
1
201109282
Data & specifications subject to change without notice
AP6922GMT-HF
CH-1 Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Reverse Transfer Capacitance
Gate Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=12A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
6.5
9.3
1.5
36
-
-
6.5
1.5
3
7.5
5
18
7
600
220
100
2.7
Max. Units
-
8.5
12.5
3
-
10
+100
10.4
-
-
-
-
-
-
960
-
-
5.4
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=12A, V
GS
=0V
I
S
=12A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
10
Max. Units
1.2
-
-
V
ns
nC
2
AP6922GMT-HF
CH-2 Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=12A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=24V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=20A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.9
4
1.5
60
-
-
36
10
20
15
10
60
25
500
400
1.6
Max. Units
-
3.8
5.2
3
-
100
+100
57
-
-
-
-
-
-
-
-
3.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
3900 6240
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
2
Test Conditions
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
0.48
25
15
Max. Units
0.5
-
-
V
ns
nC
Diode+Schottky Forward On Voltage I
S
=1A, V
GS
=0V
Body Diode+Schottky Reverse Recovery Time
Body Diode+Schottky Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec.
2
4.Surface mounted on 1 in copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6922GMT-HF
Channel-1
50
40
T
A
=25
o
C
40
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
=150 C
o
30
10V
7.0V
6.0V
5.0V
V
G
=4.0V
30
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
11
2.0
I
D
=8A
T
A
=25 C
Normalized R
DS(ON)
1.6
o
I
D
=12A
V
G
=10V
9
R
DS(ON)
(m
Ω
)
1.2
7
0.8
5
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
20
I
D
=1mA
1.6
15
Normalized V
GS(th)
(V)
1
I
S
(A)
T
j
=150
o
C
10
T
j
=25
o
C
1.2
0.8
5
0.4
0
0
0
0
1
1
1
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6922GMT-HF
Channel-1
10
1200
f=1.0MHz
I
D
=12A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
1000
800
C (pF)
6
600
C
iss
4
400
2
200
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
2
4
6
8
10
12
14
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Normalized Thermal Response (R
thja
)
Operation in this
area limited by
R
DS(ON)
10
100us
1ms
0.2
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
1s
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= PDM x R
thja
+ T
a
R
thja
=70
o
C/W
0.1
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
70
50
V
DS
=5V
60
40
I
D
, Drain Current (A)
50
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25 C
T
j
=-40 C
o
o
30
40
30
20
20
10
10
0
0
1
2
3
4
5
6
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
5
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