SIPMOS
®
Small-Signal Transistor
BSS 149
q
q
q
q
q
q
q
V
DS
200 V
I
D
0.35 A
R
DS(on)
3.5
Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in
V
GS(th)
2
1
2
3
1
3
Type
Ordering
Code
Tape and Reel
Information
bulk
E6325: 2000 pcs/carton;
Ammopack
Pin Configuration Marking Package
1
G
2
D
3
S
SS149
TO-92
BSS 149 Q62702-S623
BSS 149 Q67000-S252
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current,
T
A
= 34 ˚C
Pulsed drain current,
Max. power dissipation,
Symbol
Values
200
200
±
20
Class 1
0.35
1.05
1.0
– 55 … + 150
≤
125
E
55/150/56
W
˚C
K/W
–
A
Unit
V
V
DS
V
DGR
V
GS
–
I
D
I
D puls
P
tot
T
j
,
T
stg
R
thJA
–
–
T
A
= 25 ˚C
T
A
= 25 ˚C
Operating and storage temperature range
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Data Sheet
1
05.99
BSS 149
Electrical Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
=
−
3 V,
I
D
= 0.25 mA
Gate threshold voltage
V
DS
= 3 V,
I
D
= 1 mA
Drain-source cutoff current
V
DS
= 200 V,
V
GS
=
−
3 V
T
j
= 25 ˚C
T
j
= 125 ˚C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
Drain-source on-resistance
V
GS
= 0 V,
I
D
= 0.05 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
= 0.35 A
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
DD
= 30 V,
V
GS
=
−
2 V ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.29 A
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
DD
= 30 V,
V
GS
=
−
2 V ... + 5 V,
R
GS
= 50
Ω,
I
D
= 0.29 A
Values
typ.
max.
Unit
V
(BR)DSS
200
–
−
1.2
–
−
0.7
V
V
GS(th)
I
DSS
−
1.8
µA
–
–
–
–
10
2.5
0.2
200
nA
–
100
Ω
–
3.5
I
GSS
R
DS(on)
g
fs
0.4
0.6
500
40
12
7
20
60
50
–
S
pF
–
670
60
20
10
30
80
65
ns
C
iss
C
oss
–
C
rss
–
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
Data Sheet
2
05.99
BSS 149
Electrical Characteristics
(cont’d)
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Reverse Diode
Continuous reverse drain current
T
A
= 25 ˚C
Pulsed reverse drain current
T
A
= 25 ˚C
Diode forward on-voltage
I
F
= 0.7 A,
V
GS
= 0
Symbol
min.
Values
typ.
max.
A
–
–
–
0.8
Unit
V
V
V
V
V
V
V
V
0.35
1.05
V
–
Symbol
Limit Values
min.
Range of
V
GS(th)
max.
0.15
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
–
–
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
1.2
Test Condition
Unit
I
S
I
SM
–
V
SD
V
GS(th)
Grouping
∆V
GS(th)
Threshold voltage selected in groups
1)
:
V
GS(th)
P
R
S
T
U
V
W
1) A specific group cannot be ordered seperately.
Each reel only contains transistors from one group.
V
DS1
= 0.2 V
V
DS2
= 3 V;
I
D
= 1 mA
Data Sheet
3
05.99
BSS 149
Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Total power dissipation
P
tot
=
f
(
T
A
)
Safe operating area
I
D
=
f
(
V
DS
)
parameter:
D
= 0.01,
T
C
= 25 ˚C
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
µs
Typ. drain-source on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
Data Sheet
4
05.99
BSS 149
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
µs,
V
DS
≥
2
×
I
D
×
R
DS(on)max.
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
V
DS
≥
2
×
I
D
×
R
DS(on)max.
,
t
p
= 80
µs
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter:
I
D
= 0.05 A,
V
GS
= 0 V, (spread)
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
Data Sheet
5
05.99
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
