DATA SHEET
PHOTOCOUPLER
PS2732-1,PS2733-1
HIGH COLLECTOR TO EMITTER VOLTAGE
SOP MULTI PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington-connected phototransistor.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.
It is designed for high density mounting applications.
FEATURES
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High collector to emitter voltage (V
CEO
= 300 V: PS2732-1)
(V
CEO
= 350 V: PS2733-1)
• SOP (Small Outline Package) type
• High current transfer ratio (CTR = 4 000 % TYP.)
• Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
• Hybrid IC
• Telephone/Telegraph Receiver
• FAX
ORDERING INFORMATION
Part Number
PS2732-1, PS2733-1
Package
4-pin SOP
Safety Standard Approval
Standard products
• UL approved
PS2732-1-V, PS2733-1-V
4-pin SOP
VDE0884 approved products (Option)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10248EJ01V0DS (1st edition)
(Previous No. P11312EJ3V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1994, 2003
PS2732-1,PS2733-1
PACKAGE DIMENSIONS (in millimeters)
PS2732-1
PS2733-1
4
4.0±0.5
TOP VIEW
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.0±0.3
4.4
2.1±0.2
0.1±0.1
2.54
0.4
+0.10
–0.05
0.25 M
0.15
+0.10
–0.05
2.0
0.5±0.3
2
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
Parameter
Symbol
PS2732-1
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Ratings
PS2733-1
50
6
0.8
80
1
300
0.3
150
1.5
150
2 500
–55 to +100
–55 to +150
350
Unit
I
F
V
R
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25 °C, RH = 60 % between input and output
Data Sheet PN10248EJ01V0DS
3
PS2732-1,PS2733-1
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Collector to Emitter
Dark Current
Current Transfer Ratio
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*1
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 10 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.15
MAX.
1.4
5
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 300 V
30
400
nA
Coupled
CTR
I
F
= 1 mA, V
CE
= 2 V
1 500
4 000
%
V
CE (sat)
I
F
= 1 mA, I
C
= 2 mA
1.0
V
Ω
R
I-O
C
I-O
t
r
t
f
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 10 mA, R
L
= 100
Ω
10
11
0.4
100
100
pF
µ
s
*1
*1
Test circuit for switching time
Pulse Input
PW = 1 ms
Duty cycle = 1/10
V
CC
I
F
V
OUT
50
Ω
R
L
= 100
Ω
4
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
Diode Power Dissipation P
D
(mW)
75
150
1.5 mW/˚C
100
50
25
50
0
25
50
75
100
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
V
CE
= 300 V
1 000
100
Forward Current I
F
(mA)
10
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
100
10
1
0.1
–50
–25
0
25
50
75
100
1
0.1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
0.01
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage V
F
(V)
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
140
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
1 000
Collector Current I
C
(mA)
120
100
80
60
40
20
0
1
5 mA
4.5 mA
4 mA
3.5 mA
3 mA
2.5 mA
2 mA
1.5 mA
1 mA
I
F
= 0.5 mA
2
3
4
5
100
I
F
= 5 mA
2 mA
1 mA
10
0.5 mA
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Collector to Emitter Voltage V
CE
(V)
Collector Saturation Voltage V
CE (sat)
(V)
Data Sheet PN10248EJ01V0DS
5
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