Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4
1.7
300
MAX.
1500
800
8
15
45
3.0
-
2.1
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
≤
25 ˚C
I
C
= 4 A; I
B
= 1.0 A
f = 16kHz
I
F
= 4 A
I
Csat
= 4 A; f = 16kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
January 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
V
CEOsust
BV
EBO
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
800
7.5
-
-
0.83
-
4.2
-
TYP.
-
-
-
13.5
30
-
0.92
7
5.7
1.7
MAX.
1.0
2.0
-
-
-
3.0
1.01
-
7.3
2.1
UNIT
mA
mA
V
V
Ω
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
T
j
= 125 ˚C
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Emitter-base breakdown voltage
I
B
= 600 mA
Base-emitter resistance
V
EB
= 6 V
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 1.0 A
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 1.0 A
DC current gain
I
C
= 500 mA; V
CE
= 5 V
I
C
= 4 A; V
CE
= 5 V
Diode forward voltage
I
F
= 4 A
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
CONDITIONS
I
Csat
= 4 A; I
B1
= 0.8 A;(I
B2
= -2 A)
3.7
300
I
F
= 4 A; dI
F
/dt = 50 A/µs
V
F
= 5 V
18.5
500
4.6
400
-
-
µs
ns
V
ns
TYP.
MAX.
UNIT
t
s
t
f
V
fr
t
fr
2
Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IB1
t
20us
26us
64us
VCE
IB2
D.U.T.
IBend
LB
Cfb
Rbe
-VBB
t
Fig.1. Switching times waveforms (16 kHz).
Fig.4. Switching times test circuit.
ICsat
90 %
100
hFE
VCE = 1V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
- IB2
0.1
1
IC / A
10
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain.
I
F
I
F
100
hFE
VCE = 5V
BU4507DF/X/Z
Ths = 25 C
Ths = 85 C
10%
t fr
V
F
time
10
5V
V
F
time
V
fr
1
0.01
0.1
1
IC / A
10
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
.
Fig.6. High and low DC current gain.
January 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
10
Ths = 25 C
Ths = 85 C
BU4507DF/X/Z
120
110
100
90
80
70
60
50
40
PD%
Normalised Power Derating
with heatsink compound
1
0.1
IC/IB = 5
30
20
10
0
0.01
0.1
0
1
10
100
20
40
60
80
Ths / C
100
120
140
Fig.7. Typical collector-emitter saturation voltage.
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
1.2
VBESAT \ V
BU4507DF/X/Z
10
Zth K/W
BU4507AF
Ths = 25 C
Ths = 85 C
1.1
0.5
1
0.2
0.1
0.05
1
0.9
IC = 4 A
0.1
0.02
0.8
0.01
P
D
0
t
p
D=
t
p
T
t
1.0E+01
0.7
0.001
1.0E-07
T
0.6
0
1
2
3
IB / A
4
1.0E-05
1.0E-03
1.0E-01
t/s
Fig.8. Typical base-emitter saturation voltage.
Fig.11. Transient thermal impedance.
10
ts/tf/ us
BU4507D ts/tf
8
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
6
4
2
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.9. Typical collector storage and fall time.
I
C
=4 A; T
j
= 85˚C; f = 16kHz
January 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
16.0 max
0.7
4.5
10.0
27
max
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45
5.45
3.3
5.8 max
3.0
25
0.9 max
3.3
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1999
5
Rev 1.000
嵌入式系统
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