1N5820US – 1N5822US and 1N6864US
Qualified Levels*:
JAN, JANTX,
JANTXV and JANS
Available on
commercial
versions
3 Amp SQ-MELF Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/620
DESCRIPTION
This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high
density mounting. The 1N5822US and 1N6864US are military qualified for high-reliability
applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
JEDEC registered surface mount equivalents of 1N5820 – 1N5822 and 1N6864 numbers.
Hermetically sealed.
Metallurgically bonded.
Double plug construction.
*JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/620 for
1N6822US and 1N6864US only.
(See
Part Nomenclature
for all available options.)
RoHS compliant devices available (commercial grade only on the 1N6822US and 1N6864US).
“B” SQ-MELF
(D-5B) Package
Also available in:
“B” Package
(axial-leaded)
1N5820 – 1N5822, 1N6864
•
APPLICATIONS / BENEFITS
•
•
Small size for high density mounting (see package illustration).
Non-sensitive to ESD per MIL-STD-750 method 1020.
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-End Cap
o
Surge Peak Forward Current @ T
A
= +25 C
(Test pulse = 8.3 ms, half-sine wave.)
o (1)
Average Rectified Output Current @ T
EC
= +55 C
Symbol
T
J
T
STG
R
ӨJEC
I
FSM
I
O
Value
-65 to +125
-65 to +150
10
80
3
Unit
C
C
o
C/W
A
(pk)
o
o
o
A
NOTES:
1. See
Figures 3 and 4
for derating curves and for effects of V
R
on T
J
.
The maximum T
J
depends on the
voltage applied.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 1 of 8
1N5820US – 1N5822US and 1N6864US
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request. RoHS compliant matte-tin is available on
commercial levels (no JAN levels).
MARKING: Body painted and alpha numeric.
POLARITY: Cathode indicated by band.
Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
See
Package Dimensions
on last page.
PART NOMENCLATURE
1N5820US – 1N5821US
1N5820
JEDEC type number
See
Electrical Characteristics
table
US
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Surface Mount Package
1N5822US and 1N6864US only:
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N5822
US
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Symbol
C
T
f
I
R
I
O
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
frequency
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 2 of 8
1N5820US – 1N5822US and 1N6864US
ELECTRICAL CHARACTERISTICS
@ 25 C unless otherwise noted.
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V (pk)
20
30
40
80
MAXIMUM
FORWARD
VOLTAGE
V
FM1
I
FM
= 1.0 A
Volts
0.40
0.40
0.40
0.50
MAXIMUM
FORWARD
VOLTAGE
V
FM2
I
FM
= 3.0 A
Volts
0.50
0.50
0.50
0.70
MAXIMUM
FORWARD
VOLTAGE
V
FM3
I
FM
= 9.4 A
Volts
0.70
0.70
0.70
N/A
MAXIMUM REVERSE
LEAKAGE CURRENT
I
RM
@ V
RM
T
J
= +25 ºC
mA
0.10 @ 20 V
0.10 @ 30 V
0.10 @ 40 V
0.15 @ 80 V
T
J
= +100 ºC
mA
12.5 @ 20 V
12.5 @ 30 V
12.5 @ 40 V
18.0 @ 80 V
o
TYPE
NUMBER
1N5820US
1N5821US
1N5822US
1N6864US
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 3 of 8
1N5820US – 1N5822US and 1N6864US
GRAPHS
I
R
, Reverse Current (mA)
T
J
,
Junction Temperature (ºC)
FIGURE 1
Typical Reverse Leakage Current at Rated PIV (PULSED)
I
F
, Forward Current, Instantaneous (Amps)
V
F
, Forward Voltage, Instantaneous (Volts)
FIGURE 2
Typical Forward Voltage
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 4 of 8
1N5820US – 1N5822US and 1N6864US
GRAPHS
(continued)
Sinewave Operation Maximum Io Rating (A)
T
EC
, (°C) (End Cap)
FIGURE 3
Temperature Current Derating For 1N5822US
Sinewave Operation Maximum Io Rating (A)
T
EC
, (°C) (End Cap)
FIGURE 4
Temperature Current Derating For 1N6864US
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
Page 5 of 8
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