High-reliability discrete products
and engineering services since 1977
FEATURES
MAC6401 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Repetitive peak off-stage voltage, gate open
(T
J
= -65 to +100°C)
MAC6401B
MAC6401D
MAC6401M
MAC6401N
RMS on-state current
(conduction angle = 360°, T
C
≤ 65°C)
Peak non-repetitive surge current
(One Cycle, 60Hz)
Circuit fusing considerations
(T
J
= -65 to +100°C, t = 1.25 to 10ms)
Peak gate power
(pulse width = 1.0µs)
Average gate power
Peak gate current
(pulse width ≤ 1.0µs)
Operating junction temperature range
Storage temperature range
Stud torque
Symbol
Value
Unit
V
DRM
200
400
600
800
30
300
450
40
0.75
2
-65 to +100
-65 to +150
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Characteristic
Peak off state current
(V
D
= V
DRM
, gate open, T
J
= 100°C
Peak on-state voltage
(either direction)
(I
TM
= 100A peak)
DC gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 30Ω)
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G(+)
DC gate trigger voltage
(continuous dc), all trigger modes
(V
D
= 12V, R
L
= 30Ω)
(V
D
= Rated V
DRM
, R
L
= 125Ω, T
C
= 100°C)
Holding current
(V
D
= 12V, gate open, I
T
= 150mA)
Gate controlled turn on time
(V
D
= Rated V
DRM
, I
TM
= 45A, I
GT
= 200mA, rise time = 0.1µs)
Symbol
R
ӨJC
Symbol
I
DRM
V
TM
Max
0.9
Min
-
-
Typ
-
2.1
Unit
°C/W
Max
4
2.5
Unit
mA
Volts
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
I
GT
-
-
-
0.2
-
-
20
35
1.35
-
-
1.7
50
80
2.5
-
60
3
mA
V
GT
Volts
I
H
t
gt
mA
µs
Rev. 20130205
High-reliability discrete products
and engineering services since 1977
MAC6401 SERIES
dv/dt(c)
3
BIDIRECTIONAL TRIODE THYRISTORS
20
-
V/µs
Critical rate of rise of commutating voltage
(commutating di/dt = 16A/ms, gate unenergized, V
D
= Rated V
DRM
, I
T(RMS)
= 30A,
T
C
= rated value from figure 1)
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, gate open, exponential waveform, T
C
= 100°C)
MAC6401B
MAC6401D
MAC6401M
dv/dt
40
25
20
-
-
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Digi PF1
Alpha-numeric
Rev. 20130205
微控制器 MCU
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