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IS61SPD25636D-133TQI: 产品描述Cache SRAM, 256KX36, 4ns, CMOS, PQFP100, TQFP-100; 产品类别存储存储; 文件大小151KB，共22页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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IS61SPD25636D-133TQI概述

Cache SRAM, 256KX36, 4ns, CMOS, PQFP100, TQFP-100

IS61SPD25636D-133TQI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	ISSI(芯成半导体)
零件包装代码	QFP
包装说明	TQFP-100
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Is Samacsys	N
最长访问时间	4 ns
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e0
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	CACHE SRAM
内存宽度	36
功能数量	1
端子数量	100
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最小待机电流	3.14 V
最大压摆率	0.38 mA
最大供电电压 (Vsup)	3.63 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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IS61SPD25632T/D IS61LPD25632T/D

IS61SPD25636T/D IS61LPD25636T/D

IS61SPD51218T/D IS61LPD51218T/D

256K x 32, 256K x 36, 512K x 18

SYNCHRONOUS PIPELINE,

DOUBLE-CYCLE DESELECT STATIC RAM

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control using

MODE input

• Three chip enable option for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and

119-pin PBGA package

• Single +3.3V, +10%, –5% power supply

• Power-down snooze mode

• 3.3V I/O For SPD

• 2.5V I/O For LPD

• Double cycle deselect

• Snooze MODE for reduced-power standby

• T version (three chip selects)

• D version (two chip selects)

ISSI

ADVANCE INFORMATION

SEPTEMBER 2000

DESCRIPTION

The

ISSI

IS61SPD25632, IS61SPD25636, S61SPD51218,

IS61LPD25632, IS61LPD25636, and IS61LPD51218 are

high-speed, low-power synchronous static RAMs designed

to provide a burstable, high-performance, secondary cache for

the Pentium™, 680X0™, and PowerPC™ microprocessors.

The IS61SPD25632 and IS61LPD25632 are organized as

262,144 words by 32 bits and the IS61SPD25636 and

IS61LPD25636 are organized as 262,144 words by 36 bits.

The IS61SPD51218 and IS61LPS51218 are organized as

524,288 words by 18 bits. Fabricated with

ISSI

's advanced

CMOS technology, the device integrates a 2-bit burst

counter, high-speed SRAM core, and high-drive capability

outputs into a single monolithic circuit. All synchronous inputs

pass through registers controlled by a positive-edge-triggered

single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be from one

to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written.

Byte write operation is performed by using byte write

enable (BWE).input combined with one or more individual

byte write signals (BWx). In addition, Global Write (GW)

is available for writing all bytes at one time, regardless of

the byte write controls.

Bursts can be initiated with either

ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the

ADV

(burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW. Interleave

burst is achieved when this pin is tied HIGH or left floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

-166*

3.5

166

-150

3.8

6.7

150

-133

7.5

133

-5

100

Units

MHz

*This speed available only in SPD version

This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION

09/26/00

Rev. 00A

IS61SPD25636D-133TQI

IS61SPD25636D-133TQI概述

IS61SPD25636D-133TQI规格参数

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