Alternative Device Available
SFH6156
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 V
RMS
FEATURES
A
1
C
2
4
3
C
E
• Excellent CTR linearity depending on forward
current
• Isolation test voltage, 5300 V
RMS
• Fast switching times
• Low CTR degradation
17448-5
1
• Low coupling capacitance
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The SFH6156 features a variety of transfer ratios, low
coupling capacitance and high isolation voltage. This
coupler has a GaAs infrared diode emitter, which is optically
coupled to a silicon planar phototransistor detector, and is
incorporated in a plastic SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
APPLICATIONS
• Switchmode power supply
• Telecom
• Battery powered equipment
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• cUL tested to CSA 22.2 bulletin 5A
• BSI IEC 60950, IEC 60065
• FIMKO EN6005, EN60950-1
ORDERING INFORMATION
S
F
H
6
1
5
6
-
#
CTR
BIN
X
0
0
1
T
TAPE
AND
REEL
SMD-4
PART NUMBER
PACKAGE OPTION
> 8 mm
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI, FIMKO
SMD-4, 100 mil, pitch
VDE, UL, cUL, BSI, FIMKO
SMD-4, 100 mil, pitch
40 to 80
SFH6156-1
SFH6156-1T
40 to 80
SFH6156-1X001
SFH6156-1X001T
63 to 125
SFH6156-2
SFH6156-2T
63 to 125
SFH6156-2X001
CTR (%)
10 mA
100 to 200
SFH6156-3
SFH6156-3T
100 to 200
SFH6156-3X001
SFH6156-3X001T
160 to 320
SFH6156-4
SFH6156-4T
160 to 320
SFH6156-4X001
SFH6156-4X001T
SFH6156-2X001T
Rev. 2.6, 26-Jun-13
Document Number: 83671
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
SFH6156
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
≤
10 μs
I
FSM
V
CEO
V
ECO
I
C
t
p
≤
1 ms
I
C
VALUE
6
60
2.5
70
7
50
100
UNIT
V
mA
A
V
V
mA
mA
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between emitter and detector
Comparative tracking index per
DIN IEC112/VDE0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
(1)
t=1s
V
ISO
5300
≥
7
≥
7
≥
0.4
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to +100
260
V
RMS
mm
mm
mm
CTI
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
max. 10 s
T
sld
Ω
Ω
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD).
200
P
tot
- Power Dissipation (mW)
150
Phototransistor
100
50
Diode
0
0
18483
25
50
75
100
125
150
T
amb
- Ambient Temperature (°C)
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
Rev. 2.6, 26-Jun-13
Document Number: 83671
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
SFH6156
www.vishay.com
Vishay Semiconductors
SYMBOL
P
diss
P
diss
T
jmax.
T
jmax.
θ
EB
θ
EC
θ
DB
θ
DC
θ
ED
θ
BA
θ
CA
VALUE
100
150
125
125
173
149
111
127
95
195
3573
UNIT
mW
mW
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
θ
BA
T
JD
θ
DC
θ
DE
T
C
θ
CA
Package
θ
EC
T
JE
T
A
THERMAL CHARACTERISTICS
PARAMETER
LED power dissipation
Output power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, junction emitter to board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to board
Thermal resistance, junction detector to case
Thermal resistance, junction emitter to
junction detector
Thermal resistance, board to ambient
(1)
Thermal resistance, case to ambient
(1)
θ
DB
T
B
θ
EB
°C/W
19996
°C/W
T
A
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal
characteristics of optocouplers application note.
(1)
For 2 layer FR4 board (4" x 3" x 0.062")
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter capacitance
V
CE
= 5 V, f = 1 MHz
SFH6156-1
Collector emitter leakage current
V
CE
= 10 V
SFH6156-2
SFH6156-3
SFH6156-4
COUPLER
Collector emitter saturation voltage
Coupling capacitance
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
C
C
0.25
0.4
0.4
V
pF
C
CE
I
CEO
I
CEO
I
CEO
I
CEO
5.2
2
2
5
5
50
50
100
100
pF
nA
nA
nA
nA
I
F
= 60 mA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
I
R
C
O
1.25
0.01
13
1.65
10
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SFH6156-1
I
F
= 10 mA, V
CE
= 5 V
I
C
/I
F
I
F
= 1 mA, V
CE
= 5 V
SFH6156-2
SFH6156-3
SFH6156-4
SFH6156-1
SFH6156-2
SFH6156-3
Rev. 2.6, 26-Jun-13
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
30
45
70
TYP.
MAX.
80
125
200
320
UNIT
%
%
%
%
%
%
%
Document Number: 83671
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
SFH6156
www.vishay.com
Vishay Semiconductors
PART
SYMBOL
t
r
t
f
t
on
t
off
f
ctr
t
r
t
r
t
r
t
f
t
f
t
f
t
on
t
on
t
on
t
off
t
off
t
off
MIN.
TYP.
2
2
3
2.3
250
2
3
3
11
14
14
3
4.2
4.2
18
23
23
MAX.
UNIT
μs
μs
μs
μs
kHz
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Rise time
Fall time
Turn-on time
Turn-off time
Cut-off frequency
SATURATED
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 20 mA SFH6156-1
Rise time
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 10 mA
SFH6156-2
SFH6156-3
SFH6156-2
SFH6156-3
SFH6156-2
SFH6156-3
SFH6156-2
SFH6156-3
I
F
= 10 mA, V
CC
= 5 V, T
A
= 25 °C, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, T
A
= 25 °C, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, T
A
= 25 °C, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, T
A
= 25 °C, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, T
A
= 25 °C, R
L
= 75
Ω
TEST CONDITION
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 20 mA SFH6156-1
Fall time
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 10 mA
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 20 mA SFH6156-1
Turn-on time
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 10 mA
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 20 mA SFH6156-1
Turn-off time
V
CC
= 5 V, T
A
= 25 °C, R
L
= 1 kΩ, I
F
= 10 mA
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification (according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
per IEC 60950 2.10.5.1
CTI
V
IOTM
V
IORM
P
SO
I
SI
T
SI
7
7
0.4
175
10 000
890
400
275
175
TEST CONDITION
SYMBOL
MIN.
TYP.
55/100/21
399
V
peak
V
peak
mW
mA
°C
mm
mm
mm
MAX.
UNIT
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Rev. 2.6, 26-Jun-13
Document Number: 83671
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
SFH6156
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
30
I
F
R
L
= 75
Ω
V
CC
= 5 V
I
C
(mA)
I
C
20
I
F
=14 mA
12 mA
10 mA
8 mA
10
6 mA
4 mA
1 mA
2 mA
15
47
Ω
isfh615a_01
0
0
5
10
isfh615a_04
V
CE
(V)
Fig. 2 - Linear Operation (without Saturation)
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
1.2
25°
50°
75°
1.1
I
F
1
Ω
V
F
(V)
V
CC
= 5 V
1.0
47
Ω
0.9
isfh615a_02
10
- 1
10
0
10
1
10
2
isfh615a_05
I
F
(mA)
Fig. 3 - Switching Operation (with Saturation)
Fig. 6 - Diode Forward Voltage (Typ.) vs. Forward Current
10
3
I
F
= 10 mA, V
CE
= 5 V
5
20
f = 1 MHz
4
15
3
2
I
C
(%)
I
C (pF)
10
2
5
10
1
C
CE
5
10
1
- 25
isfh615a_03
0
0
25
50
75
10
-2
isfh615a_06
10
-1
10
0
10
1
10
2
T
A
(°C)
V
e
(V)
Fig. 4 - Current Transfer Ratio (Typ.) vs. Temperature
Fig. 7 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Rev. 2.6, 26-Jun-13
Document Number: 83671
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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