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SB20H200CT-1

产品描述DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, PLASTIC PACKAGE-3, Rectifier Diode
产品类别分立半导体    二极管   
文件大小404KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SB20H200CT-1概述

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, PLASTIC PACKAGE-3, Rectifier Diode

SB20H200CT-1规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Vishay(威世)
零件包装代码TO-262AA
包装说明R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.75 V
JEDEC-95代码TO-262AA
JESD-30 代码R-PSIP-T3
最大非重复峰值正向电流290 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压200 V
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

SB20H200CT-1文档预览

MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB
ITO-220AB
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
j
2 x 10 A
200 V
290 A
0.75 V
175 °C
1
2
3
1
2
3
MBR20H200CT
MBRF20H200CT
TO-262AA
Features
Guarding for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
1
2
3
SB20H200CT-1
PIN 1
PIN 3
PIN 2
CASE
Mechanical Data
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte Tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
Typical Applications
For use in high frequency inverters, free wheeling and
polarity protection applications
Maximum Ratings
(T
C
= 25 °C, unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
V
C
dv/dt
T
J
, T
STG
V
AC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10000
- 65 to + 175
1500
Unit
V
V
V
A
A
A
mJ
mJ
KV
V/µs
°C
V
Total device
Per leg
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per leg
Peak repetitive reverse current per leg at t
p
= 2 µs, 1 KHz
Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)
Non-repetitive avalanche energy per leg at 25 °C, I
AS
= 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
Human body model air discharge: C = 100 pF, R 0 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
Document Number 88786
26-Aug-05
www.vishay.com
1
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Electrical Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg
(1)
Test conditions
at I
F
= 10 A, T
C
= 25 °C
at I
F
= 10 A, T
C
= 125 °C
at I
F
= 20 A, T
C
= 25 °C
at I
F
= 20 A, T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
at 4.0 V, 1 MHz
Symbol
V
F
Typ.
0.81
0.65
0.87
0.74
5.0
1.0
250
Max.
0.88
0.75
0.97
0.85
Unit
V
Maximum reverse current per
leg at working peak reverse
voltage
(1)
Typical junction capacitance
I
R
µA
mA
pF
C
J
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance per leg
Notes:
(1) Pulse test: 300
μs
pulse width, 1 % duty cycle
Symbol
R
θJC
MBR
2.0
MBRF
4.0
SB
2.0
Unit
°C/W
www.vishay.com
2
Document Number 88786
26-Aug-05
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
25
10000
MBR, MBRB
20
MBRF
15
1000
T
J
= 175°C
A
v
erage For
w
ard C
u
rrent (A)
I
R
-- Instantaneo
u
s
Re
v
erse C
u
rrent (
µ
A)
100
T
J
= 125°C
T
J
= 75°C
10
1
0.1
10
5
T
J
= 25°C
0
25
50
75
100
125
150
175
0.01
10
20
30
40
50
60
70
80
90
100
Case T
emperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Derating Curve (Total)
Figure 4. Typical Reverse Characteristics Per Leg
350
325
10000
A
v
erage For
w
ard C
u
rrent (A)
300
275
250
225
200
175
150
125
100
75
50
25
0
1
10
100
J
u
nction Capacitance (pF)
1000
100
10
0.1
1
10
100
Number
of Cycles at 60 H
Z
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 5. Typical Junction Capacitance
I
F
-- Instantaneo
u
s For
w
ard C
u
rrent (A)
100
100
T
J
= 175°C
10
T
J
= 125°C
T
J
= 75°C
1
T
J
= 25°C
Transient Thermal Impedance (°C/
W
)
10
MBRF
1
MBR, MBRB
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 1.1
0.1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t -- Pulse Duration (sec.)
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
Figure 6. Typical Transient Thermal Impedance Per Leg
Document Number 88786
26-Aug-05
www.vishay.com
3
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Package outline dimensions in inches (millimeters)
T O -220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
Typ.
TO-262AA
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80) Dia.
0.139 (3.54)
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
K
0.067
(1.70) Typ.
0.331 (8.40)
Typ.
0.634 (16.10)
0.618 (15.70)
1
0.118
(3.00) Typ.
PIN
2
3
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.638 (16.20)
0.598 (15.20)
1
0.370 (9.40)
0.354 (9.00)
PIN
2
0.425 (10.80)
0.393 (10.00)
3
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) Typ.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
0.062 (1.57)
0.054 (1.37)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
Dia.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.108 (2.74)
0.092 (2.34)
0.630 (16.00)
0.614 (15.60)
1
PIN
2
0.264 (6.70)
0.248 (6.50)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
3
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) Typ.
0.058 (1.47) Max.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
www.vishay.com
4
Document Number 88786
26-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1

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