HGTD1N120CNS, HGTP1N120CN
Data Sheet
January 2000
File Number
4652.2
6.2A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120CNS, and the HGTP1N120CN are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49317.
Features
• 6.2A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical E
OFF
. . . . . . . . . . . . . . . . . . 200
µ
J at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•
Temperature Compensating
SABER™ Model
Thermal Impedance
SPICE Model
www.intersil.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HGTD1N120CNS
HGTP1N120CN
PACKAGE
TO-252AA
TO-220AB
BRAND
1N120C
1N120CN
Packaging
JEDEC TO-220AB
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A
COLLECTOR
(FLANGE)
Symbol
C
JEDEC TO-252AA
G
G
E
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. A
HGTD1N120CNS, HGTP1N120CN
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTD1N120CNS,
HGTP1N120CN
1200
6.2
3.2
6
±
20
±
30
6A at 1200V
60
0.476
10
-55 to 150
300
260
8
11
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
o
C
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
µ
s
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; V
GE
= 15V; Pulse width limited by maximum junction temperature.
2. I
CE
= 7A, L = 400
µ
H, V
GE
= 15V, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 82
Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
15
-
-
-
-
-
6.0
-
6
-
-
-
TYP
-
-
-
20
-
2.05
2.75
7.1
-
-
9.7
13
16
MAX
-
-
250
-
1.0
2.4
3.2
-
±
250
-
-
19
28
UNITS
V
V
µ
A
µ
A
mA
V
V
V
nA
A
V
nC
nC
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 1.0A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
I
C
= 50
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 82
Ω,
V
GE
= 15V,
L = 2mH, V
CE(PK)
= 1200V
I
C
= 1.0A, V
CE
= 0.5 BV
CES
I
C
= 1.0A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. A
HGTD1N120CNS, HGTP1N120CN
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82Ω
L = 4mH
Test Circuit (Figure 18)
TEST CONDITIONS
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
Ω
L = 4mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
15
11
65
365
78
175
140
13
11
75
465
83
385
200
-
MAX
21
15
95
450
-
195
155
20
18
100
625
-
460
225
2.1
UNITS
ns
ns
ns
ns
µ
J
µ
J
µJ
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
7
I
CE
, DC COLLECTOR CURRENT (A)
6
5
4
3
2
1
0
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
7
6
5
4
3
2
1
0
V
GE
= 15V
T
J
= 150
o
C, R
G
= 82Ω, V
GE
= 15V, L = 2mH
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. A
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves
300
f
MAX
, OPERATING FREQUENCY (kHz)
200
100
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
13V
15V
13V
V
CE
= 840V, R
G
= 82Ω, T
J
= 125
o
C
t
SC
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
8
3
20
20
IDEAL DIODE
T
C
= 75
o
C, V
GE
= 15V
T
J
= 150
o
C, R
G
= 82Ω, L = 4mH
V
CE
= 960V
18
18
16
16
14
I
SC
12
14
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 2.1
o
C/W, SEE NOTES
1.0
2.0
3.0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
12
5
0.5
10
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
15
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
6
5
4
3
2
1
0
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
6
5
4
T
C
= -55
o
C
3
2
1
0
T
C
= 150
o
C
T
C
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
= 13V
PULSE DURATION = 250µs
0
1
2
3
4
5
6
7
8
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
1000
800
600
400
200
0
0.5
T
J
= 25
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
1
1.5
2
2.5
3
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
E
ON2
, TURN-ON ENERGY LOSS (µJ)
R
G
= 82Ω, L = 4mH, V
CE
= 960V
500
R
G
= 82Ω, L = 4mH, V
CE
= 960V
400
T
J
= 150
o
C, V
GE
= 13V OR 15V
300
200
T
J
= 25
o
C, V
GE
= 13V OR 15V
100
0
0.5
1
1.5
2
2.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. A
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves
24
R
G
= 82Ω, L = 4mH, V
CE
= 960V
Unless Otherwise Specified
(Continued)
28
24
T
J
= 150
o
C, V
GE
= 13V
t
rI
, RISE TIME (ns)
R
G
= 82Ω, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
t
dI
, TURN-ON DELAY TIME (ns)
T
J
= 25
o
C, V
GE
= 13V
20
20
16
12
8
4
0.5
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
16
T
J
= 25
o
C, V
GE
= 15V
12
T
J
= 150
o
C, V
GE
= 15V
8
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
84
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
80
76
72
68
64
60
56
0.5
R
G
= 82Ω, L = 4mH, V
CE
= 960V
560
R
G
= 82Ω, L = 4mH, V
CE
= 960V
520
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
t
fI
, FALL TIME (ns)
480
440
400
360
320
280
T
J
= 25
o
C, V
GE
= 13V OR 15V
1
1.5
2
2.5
3
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V
1
1.5
2
2.5
3
240
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
16
14
12
10
8
6
4
2
0
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
C
= -55
o
C
15
V
CE
= 800V
12
V
CE
= 400V
9
V
CE
= 1200V
T
C
= 25
o
C
6
3
I
G(REF)
= 1mA, R
L
= 600Ω, T
C
= 25
o
C
0
0
4
8
12
16
20
T
C
= 150
o
C
9
12
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD1N120CNS, HGTP1N120CN Rev. A
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