Zeners 1N5985B - 1N6025B
Zeners
1N5985B - 1N6025B
Absolute Maximum Ratings *
Symbol
P
D
Parameter
Power Dissipation
@ TL
≤
75°C, Lead Length = 3/8”
Derate above 75°C
T
J
, T
STG
Operating and Storage Temperature Range
T
A
= 25°C unless otherwise noted
Tolerance = 5%
Units
mW
mW/°C
°C
Value
500
4.0
-65 to +200
* These ratings are limiting values above which the serviceability of the diode may be impaired.
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Electrical Characteristics
V
Z
(V) @ I
Z
(Note 1)
Device
1N5985B
1N5986B
1N5987B
1N5988B
1N5989B
1N5990B
1N5991B
1N5992B
1N5993B
1N5994B
1N5995B
1N5996B
1N5997B
1N5998B
1N5999B
1N6000B
1N6001B
1N6002B
1N6003B
1N6004B
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
1N6010B
1N6011B
1N6012B
1N6013B
1N6014B
Min.
2.58
2.565
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.89
6.46
7.125
7.79
8.645
9.5
10.45
11.4
12.35
14.25
15.2
17.1
19
20.9
22.8
25.65
28.5
31.35
34.2
37.05
Typ.
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Max.
2.52
2.835
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.51
7.14
7.875
8.61
9.555
10.5
11.55
12.6
13.65
15.75
16.8
18.9
21
23.1
25.2
28.35
31.5
34.65
37.8
40.95
T
A
=25°C unless otherwise noted
Test Current
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
Zener Impedance
Z
Z
@ I
Z
(Ω)
Ω
100
100
95
95
90
90
88
70
50
25
10
8
7
7
10
15
18
22
25
32
36
42
48
55
62
70
78
88
95
130
Z
ZK
@ I
ZK
= 250µA
µ
(Ω)
Ω
1800
1900
2000
2200
2300
2400
2500
2200
2050
1800
1300
750
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
leakage Current
I
R
(mA)
100
75
50
25
15
10
5
3
2
2
1
1
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1
1
1
1
1
1
1
1.5
2
3
4
5.2
6
6.5
7
8
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
I
ZM
(mA)
(Note 2)
208
185
167
152
139
128
116
106
98
89
81
74
67
61
55
50
45
42
38
33
31
28
25
23
21
19
17
15
14
13
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Electrical Characteristics
(Continued) T
A
=25°C unless otherwise noted
V
Z
(V) @ I
Z
(Note 1)
Device
1N6015B
1N6016B
1N6017B
1N6018B
1N6019B
1N6020B
1N6021B
1N6022B
1N6023B
1N6024B
1N6025B
Min.
40.85
44.65
48.45
53.2
58.9
64.6
71.25
77.9
86.45
95
104.5
Typ.
43
47
51
56
62
68
75
82
91
100
110
Max.
45.15
49.35
53.55
58.8
65.1
71.4
78.75
86.1
95.55
105
115.5
Test Current
I
Z
(mA)
2
2
2
2
2
2
2
2
2
1
1
Zener Impedance
Z
Z
@ I
Z
(Ω)
Ω
150
170
180
200
225
240
265
280
300
500
650
Z
ZK
@ I
ZK
= 250µA
µ
(Ω)
Ω
900
1000
1300
1400
1400
1600
1700
2000
2300
2600
3000
leakage Current
I
R
(mA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
33
36
39
43
47
52
56
62
69
76
84
I
ZM
(mA)
(Note 2)
12
11
9.8
8.9
8
7.4
6.7
6.1
5.5
5
4.5
V
F
Forward Voltage = 1.2V Max @ I
F
= 200mA
Notes:
1. Zener Voltage (V
Z
)
The zener voltage is measured with the device junction in the themal equilibrium at the lead temperature (T
L
) at 30°C ± 1°C and 3/8” lead length.
2. Maximum Zener Current Ratings (I
ZM
)
The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Top Mark Information
Device
1N5985B
1N5986B
1N5987B
1N5988B
1N5989B
1N5990B
1N5991B
1N5992B
1N5993B
1N5994B
1N5995B
1N5996B
1N5997B
1N5998B
1N5999B
1N6000B
1N6001B
1N6002B
1N6003B
1N6004B
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
1N6010B
1N6011B
1N6012B
1N6013B
1N6014B
1N6015B
1N6016B
1N6017B
1N6018B
1N6019B
1N6020B
1N6021B
1N6022B
1N6023B
1N6024B
1N6025B
Line 1
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
Line 2
598
598
598
598
598
599
599
599
599
599
599
599
599
599
599
600
600
600
600
600
600
600
600
600
600
601
601
601
601
601
601
601
601
601
601
602
602
602
602
602
602
Line 3
5B
6B
7B
8B
9B
0B
1B
2B
3B
4B
5B
6B
7B
8B
9B
0B
1B
2B
3B
4B
5B
6B
7B
8B
9B
0B
1B
2B
3B
4B
5B
6B
7B
8B
9B
0B
1B
2B
3B
4B
5B
Line 4
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
XY
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
Zeners 1N5985B - 1N6025B
Top Mark Information
(Continued)
F
1
st
line: F - Fairchild Logo
2
nd
line: Device Name - 3
rd
to 5
th
characters of the device name.
or 4
th
to 6
th
characters for BZXyy series
3
rd
line: Device Name - 6
th
to 7
th
characters of the device name.
or Voltage rating for BZXyy series
4
th
line: Device Code or - Two Digit - Six Weeks Date Code.
Date code plus or Two Digit - Six Weeks Date Code
Large die identification plus Large die identification, “L”
522
9B
XY
General Requirements:
1.0 Cathod Band
2.0 First Line: F - Fairchild Logo
3.0 Second Line: Device name - For 1Nxx series: 3
rd
to 5th characters of the device name.
For BZxx series: 4
th
to 6
th
characters of the device name.
4.0 Third Line: Device name - For 1Nxx series: 6
th
to 7
th
characters of the device name.
For BZXyy series: Voltage rating
5.0 Fourth Line: XY or XYL - Two Digit - Six Weeks Date Code
Where: X represents the last digit of the calendar year
Y represents the Six weeks numeric code
L represents the Large die identification
6.0 Devices shall be marked as required in the device specification (PID or FSC Test Spec).
7.0 Maximum no. of marking lines: 4
8.0 Maximum no. of digits per line: 3
9.0 FSC logo must be 20 % taller than the alphanumeric marking and should occupy the 2 characters of the specified line.
10.0 Marking Font: Arial (Except FSC Logo)
11.0 First character of each marking line must be aligned vertically
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
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not intended to be an exhaustive list of all such trademarks.
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Across the board. Around the world.™
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Definition of Terms
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This datasheet contains the design specifications for
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Rev. I8
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