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LVA82A

产品描述Zener Diode, 8.2V V(Z), 5%, 0.4W, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小48KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
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LVA82A概述

Zener Diode, 8.2V V(Z), 5%, 0.4W, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

LVA82A规格参数

参数名称属性值
厂商名称Microsemi
零件包装代码DO-35
包装说明O-LALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗100 Ω
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.4 W
认证状态Not Qualified
标称参考电压8.2 V
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
最大电压容差5%
工作测试电流1 mA
Base Number Matches1

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
LOW VOLTAGE AVALANCHE
ZENER DIODE
– LOW NOISE, LOW VOLTAGE
– DESIGNED FOR USE AT LOW CURRENT LEVELS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/
QUALIFIED LEVELS
DEVICES
LVA43A – LVA100A
LVA343A – LVA3100A
LVA450A – LVA498A
MAXIMUM RATING AT 25°C
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
-65°C to +175°C
400mW @ +25°C
Derate linearly to zero @ 175°C
Ø.068/.076
[1.73/1.93]
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
TYPE
NUMBER
Similar
to
JEDEC
Type
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1N6082
1N6083
1N6084
1N6085
1N6086
1N6087
1N6088
1N6089
1N6090
1N6091
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Zener
Voltage
Nom.
Vz
Volts
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
5.0
5.3
5.6
5.9
6.2
6.5
6.8
7.1
7.4
7.7
8.0
8.3
8.6
8.9
9.2
9.5
9.8
Test
Current
Izt
Maximum
Dynamic
Impedance
Zz
Note (1)
Ohms
18
15
15
40
50
50
100
100
100
100
18
18
18
40
45
50
50
60
60
60
700
250
100
100
100
100
100
175
175
175
175
175
175
175
175
175
175
Maximum
Reverse
Current
Ir @ Vr
μA
4.0
4.0
0.10
0.05
0.05
0.05
0.01
0.01
0.01
0.01
5.00
5.00
5.00
5.00
2.00
2.00
2.00
1.00
1.00
1.00
10.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
Reverse
Voltage
Vr
Maximum
Noise
Density
Nd @ 250μ
Not3 (3)
μV/√Hz
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
ΔVz
IzL – Izh
Note (2)
ΔVz
IzL
IzH
Vf
@
200mA
max
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
ALL DIMENSIONS IN
Ø.018/.022
[.46/.56]
POLARITY
BAND
(CATHODE)
LVA43A 1/
LVA47A
LVA51A
LVA56A
LVA62A
LVA68A
LVA75A
LVA82A
LVA91A
LVA100A
LVA343A 2/
LVA347A
LVA351A
LVA356A
LVA362A
LVA368A
LVA375A
LVA382A
LVA391A
LVA3100A
LVA450A 3/
LVA453A
LVA456A
LVA459A
LVA462A
LVA465A
LVA468A
LVA471A
LVA474A
LVA477A
LVA480A
LVA483A
LVA486A
LVA489A
LVA492A
LVA495A
LVA498A
mA
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Volts
1.5
1.5
2.0
3.0
4.0
5.0
6.0
6.5
8.0
9.0
1.5
2.0
3.0
4.5
5.6
6.2
6.8
7.5
8.2
9.1
4.0
4.08
4.48
4.72
4.96
5.2
5.44
5.68
5.92
6.16
6.4
6.64
6.88
7.12
7.36
7.6
7.84
V
1.125
0.75
0.45
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.95
0.50
0.50
0.50
0.10
0.10
0.10
0.10
0.10
0.10
0.40
0.20
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
mA
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.1
0.1
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
IzH
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
.150/.170
[3.81/4.32]
1.000 MIN
[25.400]
INCH
[MM]
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO-35 outline.
LEAD MATERIAL:
Copper
clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE:
(RθJEC): 250°C/W maximum at
L = .375 inch
THERMAL IMPEDANCE:
(ZθJX): 35°C/W maximum
POLARITY:
Diode to be
operated with the banded
(Cathode) en positive.
MOUNTING POSITION:
Any
NOTE:
1/ Suffix A
± 5%,
B ± 2%,
C ± 1%
2/ Suffix A
± 10%, B ± 5%,
C ± 2%,
D ± 1%
3/ Suffix A
± 0.2V, B ± 0.15V, C ± 0.11V
Note (1): Zener impedance is derived by superimposing on Izt a 60Hz rms a.c. current equal to 10% of Izt
Note (2):
ΔVz
is the difference between Vz @ IzL and IzH measured with the device junction in thermal equilibrium at the ambient temperature of
+25°C ±3°C
Note (3): Measured from 1000 to 3000 Hz
LDS-0054 Rev. 1 (080226)
Page 1 of 2

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