PMEG6010ESB
24 August 2015
60 V, 1 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
•
•
•
•
•
Average forward current: I
F(AV)
≤ 1 A
Reverse voltage: V
R
≤ 60 V
Low forward voltage, typical: V
F
= 625 mV
Low reverse current, typical: I
R
= 9 µA
Package height typ. 270 µm
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T
sp
≤ 140 °C;
square wave
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 30 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
V
R
= 60 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
-
9
30
µA
-
1.8
6
µA
-
-
-
625
60
730
V
mV
Min
-
Typ
-
Max
1
Unit
A
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMEG6010ESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
1
2
Simplified outline
Graphic symbol
1
2
sym001
Transparent top view
DSN1006-2 (SOD993)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG6010ESB
DSN1006-2
Description
DSN1006-2, leadless ultra small package; 2 terminals;
body 1.0 x 0.6 x 0.27 mm
Version
SOD993
Type number
7. Marking
Table 4.
Marking codes
Marking code
6E
Type number
PMEG6010ESB
PMEG6010ESB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 August 2015
2 / 15
NXP Semiconductors
PMEG6010ESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
≤ 135 °C; δ = 1
δ = 0.5 ; f = 20 kHz; T
amb
≤ 95 °C;
square wave
δ = 0.5 ; f = 20 kHz; T
sp
≤ 140 °C;
square wave
I
FRM
I
FSM
P
tot
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
t
p
≤ 1 ms; δ ≤ 0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[2]
[3]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-55
-65
Max
60
1.4
1
1
4
10
0.525
1
1.78
150
150
150
Unit
V
A
A
A
A
A
W
W
W
°C
°C
°C
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm each.
2
PMEG6010ESB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 August 2015
3 / 15
NXP Semiconductors
PMEG6010ESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
10
0
0.75
0.33
0.2
0.05
0.02
0.01
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
240
125
70
15
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm each.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of anode tab.
aaa-016800
2
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010ESB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 August 2015
4 / 15
NXP Semiconductors
PMEG6010ESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
aaa-016801
duty cycle =
1
0.5
0.25
0.1
0.05
0
0.02
0.01
0.75
0.33
0.2
10
1
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
2
aaa-016802
duty cycle =
1
0.75
0.33
0.2
Z
th(j-a)
(K/W)
0.5
0.25
10
0.1
0.05
0
0.02
0.01
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010ESB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 August 2015
5 / 15
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
