IGBT MODULE
MBN1200D33A
Silicon N-channel IGBT
OUTLINE DRAWING
Unit in mm
FEATURES
*
High thermal fatigue durability.
(delta Tc=70°C,N>20,000cycles)
*
low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High
speed,low loss IGBT module.
*Low
driving power due to low input
capacitance MOS gate.
*High
reliability,high durability module.
*
Isolated head sink (terminal to base).
C
C
C
C
6-M8
3-M4
8-φ7
G
E
E
E
E
Weight: 1,200 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C
)
Item
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Symbol
V
CES
V
GES
I
C
I
Cp
I
F
I
FM
Pc
T
j
T
stg
V
ISO
-
-
Unit
V
V
A
A
W
°C
°C
V
RMS
N.m
MBN1200D33A
3,300
±20
1,200
2,400
1,200
2,400
12,000
-40 ~ +125
-40 ~ +125
5,400(AC 1 minute)
2/10
6
DC
1ms
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Terminals
(M4/M8)
Screw Torque
Mounting
(M6)
(1)
(2)
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
(2)Recommended Value 5.5±0.5N.m
CHARACTERISTICS
Item
(Tc=25
°C
)
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(TO)
C
ies
t
r
t
on
t
f
t
off
V
FM
t
rr
Unit
mA
nA
V
V
nF
Min.
-
-
-
4.0
-
-
-
-
-
-
-
Typ.
-
-
4.1
5.5
150
1.6
2.3
2.4
3.9
2.8
0.8
Max.
12.0
±500
5.0
7.0
-
2.6
3.2
3.2
5.6
3.7
1.4
Test Conditions
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn On Time
Switching Times
Fall Time
Turn Off Time
Peak Forward Voltage Drop
Reverse Recovery Time
V
CE
=3,300V,V
GE
=0V
V
GE
=±20V,V
CE
=0V
I
C
=1,200A,V
GE
=15V
V
CE
=10V, I
C
=1,200mA
V
CE
=10V,V
GE
=0V,f=100KHz
V
CC
=1,650V,Ic=1,200A
ms
L=100nH
R
G
=3.3W
(3)
V
GE
=±15V Tc=125°C
-Ic=1,200A,V
GE
=0V
V
ms
Vcc=1,650V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
°C/W
Thermal Impedance
IGBT
Rth(j-c)
-
-
0.008
Junction to case
FWD
Rth(j-c)
-
-
0.016
Notes:(3) R
G
value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
(4) Counter arm IGBT V
GE
=-15V
PDE-N1200D33A-0
2000
Tc=25°C
TYPICAL
2000
Tc=125°C
V
GE
=15V
13V
TYPICAL
11V
V
GE
=15V
13V 11V
1500
1500
Collector Current, Ic (A)
9V
1000
Collector Current, Ic (A)
1000
9V
500
500
7V
7V
5V
5V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
2000
TYPICAL
V
GE
=0
Tc=25°C
Tc=125°C
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
1000
Tc=25°C
TYPICAL
Forward Current, I
F
(A)
1500
Cies
Cies, Coes, Cres(nF)
100
1000
Coes
10
500
Cres
0
0
1
2
3
4
5
1
0.1
1
10
100
Forward Voltage, V
F
(V)
Forward voltage of free-wheeling diode
5.0
4.5
TYPICAL
[Conditions]
V
CC
=1650V
Lp≈100nH
RG=3.3Ω
V
GE
=±15V
Tc=125°C
Inductive Load
2.0
Collector to Emitter Voltage, V
CE
(V)
Capacitance vs. Collector to Emitter Voltage
TYPICAL
[Conditions]
V
GE
=±15V,
RG=3.3Ω
V
CC
=1650V,
Lp≈100nH,
Tc=125°C, Inductive Load
V
CE
I
C
Switching Time, td(on), tr, td(off), tf,trr (µs)
Eon(full)
4.0
3.5
3.0
2.5
2.0
td(off)
Turn-on Loss Eon (J/pulse)
1.5
0
0
10%
10%
V
GE
Eon(10%)
t1t3
t4
Eon(10%)=
t3
t2
Eon(full)=
t1
t4 t2
.
I
.
V
C
I
C
V
CE
dt
CE
dt
tf
1.0
1.5
1.0
0.5
0.0
0
tr
0.5
trr
td(on)
500
1000
1500
0
0
500
1000
1500
Collector Current, I
C
(A)
Switching time vs. Collector current
Collector Current I
C
(A)
Turn-on Loss vs. Collector Current
PDE-N1200D33A-0
2.5
TYPICAL
2.5
[Conditions]
Tc=125°C
V
CC
=1650V
Lp≈100nH
0
RG=3.3Ω
V
GE
=±15V
Inductive Load
V
CE
I
RM
I
C
t9 t11
t12
Err(10%)=
Err(full)=
t9
t11
t10
t12 t10
10%
0.1 I
RM
t
TYPICAL
2.0
Reverse Recovery Loss Err (J/pulse)
2.0
Turn-off Loss Eoff (J/pulse)
Eoff(full)
Eoff(10%)
.
.
V
I
C
I
C
V
CE
dt
CE
dt
Err(full)
1.5
1.5
Err(10%)
1.0
[Conditions]
Tc=125°C
V
CC
=1650V
0
Lp≈100nH
0
RG=3.3Ω
V
GE
=±15V
Inductive Load
I
C
V
CE
1.0
10%
V
GE
10%
0.5
t
0.5
t5 t7
Eoff(10%)=
t8
t7
t6
Eoff(full)=
t5
.
I
.
V
C
t8 t6
I
C
V
CE
dt
CE
dt
0.0
0
500
1000
1500
0.0
0
500
1000
1500
Collector Current I
C
(A)
Turn-off Loss vs. Collector Current
TYPICAL
0.1
Collector Current I
C
(A)
Reverse Recovery Loss vs. Collector Current
Transient Thermal Impedance, R
th(j-c)
(°C/W)
Diode
0.01
IGBT
0.001
0.0001
0.001
0.01
0.1
1
10
Time, t (s)
Transient thermal impedance
PDE-N1200D33A-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
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secondary damage resulting from use at a value exceeding the absolute maximum rating.
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