DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D302
PBSS4350D
50 V low V
CEsat
NPN transistor
Product data sheet
Supersedes data of 2001 Jan 26
2001 Jul 13
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC convertor applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
handbook, halfpage
PBSS4350D
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
50
5
<145
UNIT
V
A
mΩ
6
5
4
1, 2, 5, 6
3
NPN low V
CEsat
transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
MARKING
1
2
3
MAM436
4
TYPE NUMBER
PBSS4350D
MARKING CODE
43
Fig.1
Top view
Simplified outline (SOT457; SC-74) and
symbol.
2001 Jul 13
2
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4350D
MAX.
60
50
6
3
5
1
600
750
+150
150
+150
V
V
V
A
A
A
UNIT
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
208
160
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
2001 Jul 13
3
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 50 V; I
E
= 0
V
CB
= 50 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A; note 1
V
CE
= 2 V; I
C
= 2 A; note 1
V
CEsat
collector -emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 200 mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
V
CE
= 2 V; I
C
= 1 A; note 1
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
200
200
100
−
−
−
−
−
−
100
−
PBSS4350D
TYP.
−
−
−
−
−
−
−
−
−
110
−
−
−
−
MAX.
100
50
100
−
−
−
90
170
290
<145
1.2
1.1
−
30
UNIT
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
2001 Jul 13
4
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
handbook, halfpage
600
MGW175
handbook, halfpage
hFE
500
(1)
1.2
VBE
(V)
1.0
MGW176
(1)
400
(2)
0.8
(2)
300
0.6
(3)
200
(3)
0.4
100
0.2
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25 C.
(3) T
amb
= 150
°C.
Fig.3
Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of
collector-current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
10
2
(1)
MGW181
handbook, halfpage
1.2
VBEsat
(V)
1.0
MGW178
(1)
0.8
(2)
0.6
(2)
(3)
(3)
10
0.4
0.2
1
10
−1
1
10
10
2
10
3
10
4
I C (mA)
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation as a function of
collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Jul 13
5
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