FLM1011-8F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 39.0dBm (Typ.)
High Gain: G1dB = 7.0dB (Typ.)
High PAE:
η
add = 29% (Typ.)
Low IM3 = -46dBc@Po = 28.5dBm
Broad Band: 10.7 ~ 11.7GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1011-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
42.8
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆
G
IM3
Rth
∆T
ch
f = 11.7GHz,
∆f
= 10MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS
≅
0.65 IDSS(Typ.)
ZS = ZL = 50Ω
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2200mA
VDS = 5V, IDS = 170mA
IGS = -170µA
Min.
-
-
-0.5
-5.0
38.5
6.0
-
-
-
-44
-
-
Limit
Typ. Max.
3400
3400
-1.5
-
39.0
7.0
2200
29
-
-46
3.0
-
5200
-
-3.0
-
-
-
2600
-
±0.6
-
3.5
80
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 1999
1
FLM1011-8F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
Output Power (S.C.L.) (dBc)
Total Power Dissipation (W)
33
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 11.7 GHz
2-tone test
Pout
40
30
20
10
31
f2 = 11.71 GHz
29
27
25
23
16
18
20
22
24
IM3
-20
-30
-40
-50
0
50
100
150
200
Case Temperature (°C)
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
40
Output Power (dBm)
39
Output Power (dBm)
Pin=33dBm
31dBm
39
37
35
33
31
VDS=10V
f = 11.2 GHz
Pout
38
37
36
35
10.7
10.95
11.2
27dBm
29dBm
30
η
add
29
23
25
27
29
31 33
15
11.45
11.7
Frequency (GHz)
Input Power (dBm)
2
η
add (%)
IM3 (dBc)
FLM1011-8F
X, Ku-Band Internally Matched FET
S11
S22
+j100
+j25
10.7
11.7
+j50
+90°
S21
S12
10.9
11.1
+j10
11.5
11.3
11.9
11.9
+j250
10.5 GHz
10.5 GHz
10.5 GHz
10.7
10.9
11.1
11.3
11.3
0
10
11.1
50Ω
11.7
10.7
10.9
180°
4
3
2
1
11.5
11.7
SCALE FOR |S21|
SCALE FOR |S12|
11.5
0°
10.9
11.5
10.7
11.3
11.1
11.7
-j10
10.5 GHz
-j250
11.9
0.1
11.9
-j25
-j50
-j100
0.2
-90°
S-PARAMETERS
VDS = 10V, IDS = 2200mA
FREQUENCY
(MHZ)
10500
10600
10700
10800
10900
11000
11100
11200
11300
11400
11500
11600
11700
11800
11900
S11
MAG
.638
.630
.617
.597
.570
.539
.498
.449
.397
.337
.276
.217
.167
.143
.168
S21
ANG
13.3
5.4
-2.6
-10.6
-18.9
-27.5
-36.2
-45.8
-55.9
-67.2
-80.6
-97.8
S12
ANG
110.3
100.3
89.8
78.9
68.3
57.0
45.3
33.5
21.5
9.2
-2.8
-14.9
-27.2
-39.7
-52.6
S22
ANG
93.2
83.2
73.3
63.9
53.1
43.1
32.6
22.7
12.3
0.3
-10.3
-21.7
-32.9
-44.9
-57.6
MAG
2.349
2.376
2.410
2.446
2.476
2.513
2.544
2.563
2.565
2.561
2.548
2.528
2.519
2.509
2.502
MAG
.066
.071
.074
.076
.081
.082
.083
.087
.088
.090
.090
.089
.093
.090
.093
MAG
.386
.358
.326
.299
.283
.282
.297
.324
.356
.386
.411
.425
.429
.419
.399
ANG
-83.3
-93.7
-106.9
-122.1
-140.5
-161.2
179.1
161.1
146.0
133.2
122.1
112.3
103.1
94.1
84.4
-124.5
-162.8
157.8
Download S-Parameters, click here
3
FLM1011-8F
X, Ku-Band Internally Matched FET
Case Style "IB"
Metal-Ceramic Hermetic Package
2.0 Min.
(0.079)
2-R 1.6±0.15
(0.063)
1
2
0.1
(0.004)
3
0.6
(0.024)
2.0 Min.
(0.079)
2.6±0.15
(0.102)
5.2 Max.
(0.205)
10.7
(0.421)
0.2 Max.
(0.008)
1.45
(0.059)
12.9±0.2
(0.508)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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