AP6902AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Fast Switching Performance
▼
Two Independent Device
▼
Halogen Free & RoHS Compliant
S1
G1
S2
G2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 (TAB1)
D2 (TAB2)
BV
DSS
R
DS(ON)
I
D
30V
9.2mΩ
52A
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost-effectiveness.
SDPAK
TM
used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
SDPAK
TM
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
52
13.8
11
50
3
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
3
42
Unit
℃/W
℃/W
1
201303041
Data and specifications subject to change without notice
AP6902AGH-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=12A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=12A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
26
-
-
15
2
9.5
9
41
24
10
800
210
150
2.4
Max. Units
-
9.2
13.5
3
-
10
+100
24
-
-
-
-
-
-
1280
-
-
4.8
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=2.5A, V
GS
=0V
Is=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23
10
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Rthja is determined with the device, mounted on 2oz FR4 board t
≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6902AGH-HF
50
50
T
A
= 25
o
C
40
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
GS
=4.0V
T
A
= 150
o
C
40
10V
7.0V
6.0V
5.0V
V
GS
=4.0V
30
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I
D
=8A
11
T
A
=25
o
C
Normalized R
DS(ON)
1.6
I
D
= 12 A
V
G
=10V
R
DS(ON)
(m
Ω
)
10
1.2
9
0.8
8
7
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
,Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I
D
=250uA
8
1.6
Normalized V
GS(th)
I
S
(A)
6
1.2
T
j
=150 C
4
o
T
j
=25 C
o
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6902AGH-HF
10
1600
f=1.0MHz
I
D
= 12 A
V
DS
=24V
8
V
GS
, Gate to Source Voltage (V)
1200
6
C (pF)
800
C
iss
4
400
2
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
100us
1ms
I
D
(A)
1
Normalized Thermal Response (R
thja
)
0.2
10ms
100ms
1s
0.1
0.1
0.05
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=75
o
C/W
0.1
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
DC
0.01
Single Pulse
0.01
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
16
V
DS
=5V
50
I
D
, Drain Current (A)
T
j
=25
o
C
T
j
= -40 C
o
3
4
5
6
I
D
, Drain Current (A)
12
40
30
8
20
T
j
=150 C
o
4
10
0
0
0
1
2
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
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