(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[1]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
................................ –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
[2]
0°C to +70°C
–40°C to +85°C
V
CC
5V ± 0.5
Electrical Characteristics
Over the Operating Range
7C1041B-12
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[1]
Input Load Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
GND < V
I
< V
CC
GND < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Com’l
Com’l
Ind’l
L
Com’l
Ind’l
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
2.2
–0.5
–1
–1
Min.
2.4
0.4
V
CC
+ 0.5
0.8
+1
+1
200
220
40
2.2
–0.5
–1
–1
Max.
7C1041B-15
Min.
2.4
0.4
V
CC
+ 0.5
0.8
+1
+1
190
210
40
2.2
–0.5
–1
–1
Max.
7C1041B-17
Min.
2.4
0.4
V
CC
+ 0.5
0.8
+1
+1
180
200
40
Max.
Unit
V
V
V
V
mA
mA
mA
mA
mA
I
SB2
3
-
-
3
0.5
6
3
0.5
6
mA
mA
mA
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the case temperature.
Document #: 38-05142 Rev. *A
Page 2 of 11
CY7C1041B
Electrical Characteristics
Over the Operating Range (continued)
Test Conditions
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
I
SB2
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[1]
Input Load Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
GND < V
I
< V
CC
GND < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Com’l
Com’l
Ind’l
L
Com’l
Ind’l
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
2.2
–0.5
–1
–1
7C1041B-20
Min.
2.4
0.4
V
CC
+ 0.5
0.8
+1
+1
170
190
40
2.2
–0.5
–1
–1
Max.
7C1041B-25
Min.
2.4
0.4
V
CC
+ 0.5
0.8
+1
+1
160
180
40
Max.
Unit
V
V
V
V
mA
mA
mA
mA
mA
3
0.5
6
3
0.5
6
mA
mA
mA
Capacitance
[3]
Parameter
C
IN
C
OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
AC Test Loads and Waveforms
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
Equivalent to:
R2
255Ω
R1 481Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R2
255Ω
GND
≤
3 ns
R1 481
Ω
3.0V
ALL INPUT PULSES
90%
10%
90%
10%
≤
3 ns
THÉVENIN EQUIVALENT
167Ω
1.73V
OUTPUT
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05142 Rev. *A
Page 3 of 11
CY7C1041B
Switching Characteristics
[4]
Over the Operating Range
7C1041B-12
Parameter
Read Cycle
t
power
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
t
BW
V
CC
(typical) to the First Access
[5]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[6, 7]
CE LOW to Low Z
[7]
CE HIGH to High Z
[6, 7]
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[7]
WE LOW to High Z
[6, 7]
Byte Enable to End of Write
10
12
10
10
0
0
10
7
0
3
6
12
0
6
15
12
12
0
0
12
8
0
3
7
12
0
12
6
0
7
17
14
14
0
0
14
8
0
3
7
3
6
0
15
7
0
7
0
6
3
7
0
17
7
3
12
6
0
7
3
7
1
12
12
3
15
7
0
7
1
15
15
3
17
7
1
17
17
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
7C1041B-15
Min.
Max.
7C1041B-17
Min.
Max.
Unit
Write Cycle
[8, 9]
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. t
power
time has to be provided initially before a read/write operation is
started.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t
便携式数字数据采集系统（PDDAS）使用了LabVIEW实时模块和PXI，以控制风洞测试和采集记录来自128个不同通道的空气压力数据 "通过LabVIEW实时模块，可以在各种操作情况下获得采集空气压力数据及向风洞提供反馈控制信号所需的确定性响应时间。" – Dave Scheibenhoffer, G Systems 挑战: 用一个可采集、分析和存储来自下一代喷气式战斗机引擎设计的动...[详细]
国际半导体设备材料产业协会（SEMI）昨（10）日公布半导体设备资本支出的年中预测报告（SEMI Capital Equipment Forecast），预估2012年全球半导体设备营收规模将达到423.8亿美元，2013年将成长至467.1亿美元。
受惠平板电脑、智慧型手机与行动装置等消费性电子商品亮丽表现，半导体设备的采购需求仍将持续。SEMI在报告中指出，2011年半...[详细]
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
