电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1SS417(TL3,T)

产品描述Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
产品类别分立半导体    二极管   
文件大小131KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 全文预览

1SS417(TL3,T)概述

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon

1SS417(TL3,T)规格参数

参数名称属性值
包装说明R-PDSO-F2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-F2
元件数量1
端子数量2
最高工作温度100 °C
最低工作温度-40 °C
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大功率耗散0.1 W
最大重复峰值反向电压45 V
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL
Base Number Matches1

文档预览

下载PDF文档
1SS417
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS417
High Speed Switching Application
0.6±0.05
Unit: mm
A
0.1
Low forward voltage: V
F (3)
= 0.56V (typ.)
Low reverse current: I
R
= 5μA (Max.)
CATHODE MARK
Small package
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P*
T
j
T
stg
Rating
45
40
200
100
1
100
125
−55~125
Unit
V
V
mA
mA
A
mW
°C
°C
0.07 M A
0.1
0.2
±0.05
0.8±0.05
0.1±0.05
0.48
-0.03
+0.02
fSC
JEDEC
JEITA
Operating temperature range
T
opr
−40~100
°C
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
V
R
= 40V
V
R
= 0, f = 1MH
z
Min
Typ.
0.28
0.36
0.56
15
Max
0.62
5
μA
pF
V
Unit
Equivalent Circuit
(Top View)
Marking
X
1
2007-11-01
1.0±0.05

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2518  357  2484  266  1156  51  8  6  24  57 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved