KSA954
KSA954
Audio Frequency Amplifier
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-80
-80
-5
-300
-500
600
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
* PW≤10ms, Duty Cycle≤50% Pulsed
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
BE
(sat)
V
CE
(sat)
C
ob
f
T
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Base Emitter On Voltage
* Base Emitter Saturation Voltage
Collector -Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Test Condition
V
CB
= -80V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -1V, I
C
= -50mA
V
CE
= -2V, I
C
= -300mA
V
CE
= -6V, I
C
= -10mA
I
C
= -300mA, I
B
= -30mA
I
C
= -300mA, I
B
= -30mA
V
CB
= -6V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -10mA
50
90
30
-600
200
80
-660
-0.85
-0.15
13
100
Min.
Typ.
Max.
-100
-100
400
-700
-1.2
-0.6
25
mV
V
V
pF
MHz
Units
nA
nA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE1
Classification
Classification
h
FE1
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA954
Typical Characteristics
-500
-20
I
B
= -60
µ
A
I
C
[mA], COLLECTOR CURRENT
-400
I
C
[mA], COLLECTOR CURRENT
P
T
= 600mW
-16
-300
I
B
= -5.0mA
I
B
= -4.5mA
I
B
= -4.0mA
I
B
= -3.5mA
I
B
= -3.0mA
I
B
= -2.5mA
I
B
= -2.0mA
I
B
= -1.5mA
I
B
= -50
µ
A
I
B
= -40
µ
A
-12
I
B
= -30
µ
A
-200
I
B
= -1.0mA
I
B
= -0.5mA
-8
P
T
= 600mW
I
B
= -20
µ
A
-100
-4
I
B
= -10
µ
A
I
B
= 0
I
B
= 0
0
0
-1
-2
-3
-4
-5
0
0
-10
-20
-30
-40
-50
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
PULSE
V
CE
=-2.0V
I
C
= 10 I
B
PULSE
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
V
CE
= -1.0V
10
-0.1
V
CE
(sat)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
100
I
C
[mA], COLLECTOR CURRENT
Cib(pF), Cob(pF), CAPACITANCE
V
CE
= -6V
PULSE
-100
f = 1MHz
C
ib
(I
C
=0)
C
ob
(I
E
=0)
10
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
1
-0.1
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGEE
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA954
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
-1000
V
CE
= -6.0V
duty cycle < 2%
I
C
[mA], COLLECTOR CURRENT
PW
20
0
-100
100
ms
=1
0m
s
DC
10
-10
KSA953
-1
-1
-10
1
1
10
100
KSA954
-100
I
E
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
0.7
P
C
[W], POWER DISSIPATION
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
o
75
100
125
150
175
T
a
[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA954
Package Demensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
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E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
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DISCLAIMER
HiSeC™
ISOPLANAR™
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POP™
PowerTrench
®
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Quiet Series™
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SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E