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UPA869TD

产品描述RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PIN
产品类别分立半导体    晶体管   
文件大小66KB,共6页
制造商NEC(日电)
下载文档 详细参数 全文预览

UPA869TD概述

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PIN

UPA869TD规格参数

参数名称属性值
包装说明LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
基于收集器的最大容量0.8 pF
集电极-发射极最大电压5 V
配置SEPARATE, 2 ELEMENTS
最高频带L BAND
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管元件材料SILICON GERMANIUM
标称过渡频率 (fT)6500 MHz
Base Number Matches1

文档预览

下载PDF文档
PRELIMINARY DATA SHEET
NPN SILICON + SiGe RF TWIN TRANSISTOR
µ
PA869TD
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• 2 different built-in transistors (NESG2046M33, 2SC5800)
Q1: High gain SiGe transistor
f
T
= 18 GHz TYP.,
S
21e
2
= 13 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 6.5 GHz TYP.,
S
21e
2
= 5.5 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
Q1
3-pin super lead-less minimold part No.
3-pin thin-type ultra super minimold part No.
NESG2046M33
Q2
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Supplying Form
µ
PA869TD
µ
PA869TD-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10460EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004

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