AT-41532
General Purpose, Low Current NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-41532 is a general purpose NPN bipolar transis-
tor that has been optimized for maximum ft at low voltage
operation, making it ideal for use in battery powered
applications in cellular/PCS and other wireless markets.
The AT-41532 uses the miniature 3-lead SOT-323 (SC-70)
plastic package.
Optimized performance at 5 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB NF and 15.5 dB as-
sociated gain at 5 V and 5 mA bias. High gain capability
at 1 V and 1 mA makes this device a good fit for 900 MHz
pager applications. A good noise match near 50 ohms at
900 MHz makes this a very user-friendly device. Moreover,
voltage breakdowns are high enough to support operation
at 10 V.
The AT-41532 belongs to Avago’s AT-4XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance, and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
Features
•
General Purpose NPN Bipolar Transistor Optimized for
Low Current, Low Voltage Applications at 900 MHz,
1.8 GHz, and 2.4 GHz
•
Performance (5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB GA
1.8 GHz: 1.4 dB NF, 10.5 dB GA
2.4 GHz: 1.9 dB NF, 9 dB GA
•
Characterized for 3, 5, and 8 V Use
•
Miniature 3-lead SOT-323 (SC-70) Plastic Package
•
High Breakdown Voltage (can be operated up to 10 V)
•
Lead-free
Applications
•
LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
•
LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
•
Power Amplifier and Oscillator for RF-ID Tag
•
LNA and Gain Amplifier for GPS
•
LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
COLLECTOR
41
BASE
EMITTER
AT-41532 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2, 3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance
[2]:
q
jc
= 350°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. T
MOUNTING SURFACE
= 25°C.
3. Derate at 2.86 mW/°C for T
MOUNTING SURFACE
> 72°C.
Electrical Specifications, T
A
= 25°C
Symbol
h
FE
I
CBO
I
EBO
Parameters and Test Conditions
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
CE
= 5 V,
I
C
= 5 mA
V
CB
= 3 V
V
EB
= 1 V
Units
–
mA
mA
Min
30
Typ
150
Max
270
0.2
1.0
Characterization Information, T
A
= 25°C
Symbol
NF
Parameters and Test Conditions
Noise Figure
V
CE
= 5 V, I
C
= 5 mA
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
Units
dB
Min
Typ
1.0
1.4
1.9
15.5
10.5
9.0
14.5
14.5
25
G
A
Associated Gain
V
CE
= 5 V, I
C
= 5 mA
dB
P
1dB
G
1dB
IP
3
|S
21E
|
2
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Output Third Order Intercept Point (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Gain in 50
Ω
System
V
CE
= 5 V, I
C
= 5 mA
dBm
dB
dBm
dB
12.5
13.25
5.2
2
AT-41532 Typical Performance
4.0
3.5
NOISE FIGURE (dB)
NOISE FIGURE (dB)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
4.0
2 mA
5 mA
NOISE FIGURE (dB)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
4.0
2 mA
5 mA
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. AT-41532 Typical Noise Figure vs.
Frequency at 1 V, 1 mA.
10
8
GAIN (dB)
Figure 2. AT-41532 Typical Noise Figure vs.
Frequency and Current at 2.7 V.
16
2 mA
5 mA
12
GAIN
(dB)
GAIN
(dB)
Figure 3. AT-41532 Typical Noise Figure vs.
Frequency and Current at 5 V.
16
2 mA
5 mA
12
6
8
8
4
2
0
0.5
4
4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. AT-41532 Associated Gain vs.
Frequency at 1 V, 1 mA.
20
15
10
5
0
-5
-10
2.7 V
5V
0
5
10
15
20
25
Figure 5. AT-41532 Associated Gain vs.
Frequency and Current at 2.7 V.
9
8
7
G
1 dB
(dB)
6
5
4
3
2
1
0
0
5
10
15
2.7 V
5V
20
25
Figure 6. AT-41532 Associated Gain vs.
Frequency and Current at 5 V.
P
1 dB
(dBm)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure 7. AT-41532 P
1
dB vs. Collector Current
and Voltage (valid up to 2.4 GHz).
Figure 8. AT-41532 G
1
dB vs. Collector Current
and Voltage (valid up to 2.4 GHz).
3
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