STB40NF10L
N-channel 100V - 0.028Ω - 40A - D
2
PAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB40NF10L
■
■
■
V
DSS
100V
R
DS(on)
<0.033Ω
I
D
40A
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
3
1
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
D
2
PAK
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB40NF10L
Marking
B40NF10L
Package
D
2
PAK
Packaging
Tape & reel
June 2006
Rev 2
1/13
www.st.com
13
Contents
STB40NF10L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB40NF10L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(1)
P
tot
E
AS (2)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Single pulse avalanche energy
Storage temperature
-65 to 175
Max. operating junction temperature
°C
Value
100
100
± 15
40
25
160
150
1
430
Unit
V
V
V
A
A
A
W
W/°C
mJ
1. Pulse width limited by safe operating area.
2. Starting T
j
= 25 °C, I
D
= 20A, V
DD
= 40V
Table 2.
Rthj-case
Rthj-amb
T
J
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
1
62.5
300
°C/W
°C/W
°C
3/13
Electrical characteristics
STB40NF10L
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 5V, I
D
= 20A
1
1.7
0.028
0.030
Min.
100
1
10
±100
2.5
0.033
0.036
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V
,
I
D
= 20A
Min.
Typ.
25
2300
290
125
25
82
64
24
46
12
22
64
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 50V, I
D
= 20A
R
G
= 4.7Ω V
GS
= 4.5V
(see
Figure 13)
V
DD
= 80V, I
D
= 40A,
V
GS
= 4.5V, R
G
= 4.7Ω
(see
Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
STB40NF10L
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 40A, V
GS
= 0
110
467
8
Test conditions
Min.
Typ.
Max.
40
160
1.3
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 40A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 30V, T
j
= 150°C
Reverse recovery current (see
Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
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